Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparing method of depleted-uranium magnetron sputtering target slices

A technology of magnetron sputtering and depleted uranium, which is applied in the field of preparation of depleted uranium magnetron sputtering targets, and can solve the problems that the preparation method is difficult to meet the requirements

Active Publication Date: 2017-07-07
CHINA NUCLEAR BAOTOU GUANGHUA CHEM IND
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Because depleted uranium has the characteristics of instantaneous surface oxidation and anisotropy, the traditional preparation methods are difficult to meet the requirements. At present, magnetron sputtering is widely used to prepare depleted uranium metal thin films.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparing method of depleted-uranium magnetron sputtering target slices
  • Preparing method of depleted-uranium magnetron sputtering target slices
  • Preparing method of depleted-uranium magnetron sputtering target slices

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] The technical solutions of the present invention will be further described in detail below through specific examples.

[0027] A method for preparing a depleted uranium magnetron sputtering target of the present invention comprises the following steps;

[0028] (1) Refining and purification

[0029] Due to the active chemical properties of metallic uranium, it is easy to react with H during the reduction process. 2 O, O 2 , C and other media reactions to produce hydrides, oxides and carbides, etc., so the calcithermal reduction of UF 4 The obtained uranium ingots are vacuum refined, and in a vacuum atmosphere, the impurity elements in the metal uranium can be effectively removed through high-temperature volatilization, vacuum degassing, slagging, etc., so as to achieve the purpose of purification.

[0030] The specific method is to carry out vacuum refining three times in a vacuum induction furnace, a vacuum consumable electric arc furnace, and a vacuum induction fur...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the technical field of preparation of magnetron sputtering target slices, and particularly relates to a preparing method of depleted-uranium magnetron sputtering target slices. The method comprises following steps: firstly, a uranium ingot obtained through UF4 calcium thermic reduction is subject to vacuum refining, and a purified cylindrical depleted-uranium ingot casting is obtained; secondly, plastic deformation is achieved, wherein the purified cylindrical depleted-uranium ingot casting obtained in the first step is subject to heat extrusion in the height direction, and the cylindrical depleted-uranium ingot casting is subject to upsetting in the height direction; thirdly, the extruded and upset metal uranium piece obtained in the second step is subject to vacuum dehydrogenation heat treatment; fourthly, the metal uranium piece obtained in the third step and subject to vacuum dehydrogenation heat treatment is subject to finish turning, and then accurate grinding is carried out. Projects of the phase, the microstructure, the surface roughness and the like of the depleted-uranium sputtering target slices are subject to detected analysis, and the technical requirement of a magnetron sputtering uranium thin film for the depleted-uranium magnetron sputtering target material can be completely met.

Description

technical field [0001] The invention belongs to the technical field of magnetron sputtering target preparation, in particular to a method for preparing a depleted uranium magnetron sputtering target. Background technique [0002] Metal uranium films are often used as targets or sources in low-energy physical scattering experiments to study the interaction between the uranium film and the substrate interface. The test has extremely high requirements for the consistency of the thickness of the uranium film and the surface roughness of the uranium film. [0003] Because depleted uranium has the characteristics of instantaneous surface oxidation and anisotropy, traditional preparation methods are difficult to meet the requirements. At present, magnetron sputtering is widely used to prepare depleted uranium metal thin films. [0004] As the basic consumables in the process of magnetron sputtering depleted uranium metal thin film, the quality of the depleted uranium sputtering tar...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C14/35
CPCC23C14/3414C23C14/35
Inventor 康泰峰郭洪马文军田春雨孟剑雄杨哲蔡振方
Owner CHINA NUCLEAR BAOTOU GUANGHUA CHEM IND
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com