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CMOS image sensor and formation method therefor

An image sensor and dielectric layer technology, applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve the problem of serious bright spots in CMOS image sensors, and achieve the effect of reducing leakage current, suppressing grain growth, and avoiding bright spots.

Inactive Publication Date: 2017-07-07
OMNIVISION TECH (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a CMOS image sensor and its forming method to solve the problem of relatively serious bright spots still existing in the CMOS image sensor in the prior art

Method used

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Embodiment 1

[0028] Please refer to figure 1 , which is a schematic structural diagram of a CMOS image sensor according to Embodiment 1 of the present invention. Such as figure 1 As shown, in the embodiment of the present application, the CMOS image sensor 1 includes: a semiconductor substrate 10, a first oxide layer 11 formed on the semiconductor substrate 10, and a first oxide layer 11 formed on the first oxide layer 11. The first high-K dielectric layer 12, wherein the first high-K dielectric layer 12 includes multiple first high-K dielectric sub-layers, and the interface between two adjacent first high-K dielectric sub-layers is discontinuous. Here, the first high-K dielectric layer 12 includes three first high-K dielectric sub-layers, which are respectively the first high-K dielectric sub-layer 120, the first high-K dielectric sub-layer 121 and the first high-K dielectric sub-layer 122.

[0029] Specifically, a semiconductor substrate 10 is provided first. Preferably, the semicond...

Embodiment 2

[0038] Please refer to Figure 4 , which is a schematic structural diagram of a CMOS image sensor according to Embodiment 2 of the present invention. Such as Figure 4 As shown, in the embodiment of the present application, the CMOS image sensor 2 includes: a semiconductor substrate 20, a first oxide layer 21 formed on the semiconductor substrate 20, and a first oxide layer 21 formed on the first oxide layer 21. The first high-K dielectric layer 22, the second high-K dielectric layer 23 formed on the first high-K dielectric layer 22, and the second oxide layer 24 formed on the second high-K dielectric layer 23, wherein, The first high-K dielectric layer 22 includes multiple first high-K dielectric sub-layers, and the interface between two adjacent first high-K dielectric sub-layers is discontinuous. Here, the first high-K dielectric layer 22 includes two first high-K dielectric sublayers, namely the first high-K dielectric sublayer 220 and the first high-K dielectric sublaye...

Embodiment 3

[0047] Please refer to Figure 5 , which is a schematic structural diagram of a CMOS image sensor according to Embodiment 3 of the present invention. Such as Figure 5 As shown, in the embodiment of the present application, the CMOS image sensor 3 includes: a semiconductor substrate 30, a first oxide layer 31 formed on the semiconductor substrate 30, and a first oxide layer 31 formed on the first oxide layer 31. The first high-K dielectric layer 32, the second high-K dielectric layer 33 formed on the first high-K dielectric layer 32, and the second oxide layer 34 formed on the second high-K dielectric layer 33; wherein, The first high-K dielectric layer 32 includes multiple first high-K dielectric sub-layers, and the interface between two adjacent first high-K dielectric sub-layers is discontinuous; the second high-K dielectric layer 33 includes multiple first high-K dielectric sub-layers. For the second high-K dielectric sublayer, the interface between two adjacent second h...

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Abstract

The invention provides a CMOS image sensor and a formation method therefor. A first high-K dielectric layer comprises multiple layers of first high-K dielectric sub layers, wherein the interface between adjacent two layers of the first high-K dielectric sub layers is not continuous, so that a coupling effect can be improved while crystal particle growth can be suppressed; and therefore, free negative charges in a semiconductor substrate can be well fixed on the interface between a first oxidization layer and the first high-K dielectric layer, and free positive charges in the semiconductor substrate can be fixed on the interface between the semiconductor substrate and the first oxidization layer, so that leakage current can be well lowered, and the white-pixel problem can be further relieved / avoided.

Description

technical field [0001] The invention relates to the technical field of image sensor manufacturing, in particular to a CMOS image sensor and a forming method thereof. Background technique [0002] An image sensor is an important part of a digital camera, a device that converts an optical image into a signal, and is widely used in digital cameras, mobile terminals, portable electronic devices and other electro-optical devices. Image sensors can be classified into two categories, CCD (Charge Coupled Device, Charge Coupled Device) and CMOS (Complementary Metal Semiconductor, Complementary Metal Oxide Semiconductor Element) image sensors. [0003] Since the CMOS image sensor is manufactured using a traditional CMOS circuit process, the image sensor and its required peripheral circuits can be integrated, so that the CMOS image sensor has a wider application prospect. [0004] The problem of white pixels has always existed in CMOS image sensors, and in the prior art, a high-K (hig...

Claims

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Application Information

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IPC IPC(8): H01L27/146
CPCH01L27/1462H01L27/14685
Inventor 叶通迪王从建翁鸿铭余兴
Owner OMNIVISION TECH (SHANGHAI) CO LTD
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