Visible light and ultraviolet selectivity photoelectric detector

A photodetector and visible light technology, applied in the field of sensors, can solve the problems of a single detector, insufficient utilization, and large photodetector size, and achieve the effects of optimizing device structure, reducing device size, and improving detection efficiency

Inactive Publication Date: 2017-07-14
北京东兴固科技发展有限公司
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  • Abstract
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  • Claims
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Problems solved by technology

[0004] At present, the detector is usually a single detector, and the functional layer is only sensitive to one kind of light to be detected. There is no detector that is integrated on a chip and can selectively detect visible light or ultraviolet lig

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  • Visible light and ultraviolet selectivity photoelectric detector

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[0022] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. Preferred embodiments of the invention are shown in the accompanying drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided to make the understanding of the disclosure of the present invention more thorough and comprehensive.

[0023] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0024] see figure 1 , the invention provides a kind of visible light and ultraviolet selective photodetector, it is characterized in that, comprises:

[0025] insulating substrate 1;

[0026] A first electrode 2 is set on the insulating substrate 1, and the first electrode 2 is set as a gate electrode 10 of a...

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Abstract

The present invention provides a visible light and ultraviolet selectivity photoelectric detector. The detector comprises an ultraviolet detection portion, a thin film transistor and a transverse visible light detection portion which are arranged on an insulation substrate. The structure of the detector is reasonably designed, the ultraviolet detection portion, the thin film transistor and the transverse visible light detection portion are integrated on one substrate, and an ultraviolet detection function layer is taken as the channel layer of the thin film transistor so as to shorten the size of the device and optimize the structure of the device, the thin film transistor is employed to realize selection of visible light and ultraviolet detection and improve the detection efficiency.

Description

technical field [0001] The invention relates to a sensor, in particular to a visible light and ultraviolet selective photodetector. Background technique [0002] A photoelectric sensor generally consists of two parts: a processing path and a processing element. Its basic principle is based on the photoelectric effect, which converts the measured changes into changes in optical signals, and then further converts non-electrical signals into electrical signals with the help of photoelectric elements. The photoelectric effect refers to irradiating an object with light, which can be regarded as a series of photons with a certain energy bombarding the object. At this time, the photon energy is transferred to the electron, and the entire energy of a photon is absorbed by one at a time. When the electrons are absorbed, the state of the electrons will change after they get the energy transmitted by the photons, so that the object irradiated by the light will have a corresponding ele...

Claims

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Application Information

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IPC IPC(8): H01L31/02H01L31/09
CPCH01L31/02016H01L31/09
Inventor 黄晓敏
Owner 北京东兴固科技发展有限公司
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