Microphone structure and manufacturing method thereof

A manufacturing method and microphone technology, which is applied in the direction of electrostatic transducer microphones, sensors, electrical components, etc., can solve the problems that the performance of MEMS microphones needs to be improved, and achieve the effect of increasing the amount of change and improving sensitivity

Active Publication Date: 2017-07-14
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] But, the performance of the MEMS microph

Method used

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  • Microphone structure and manufacturing method thereof
  • Microphone structure and manufacturing method thereof
  • Microphone structure and manufacturing method thereof

Examples

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Example Embodiment

[0031] It can be known from the background technology that the performance of the microphone formed in the prior art needs to be optimized.

[0032] reference figure 1 , figure 1 A schematic diagram of the structure of a microphone in the prior art is shown. The function of the microphone is realized by a capacitor structure 110. The capacitor structure 110 mainly includes a diaphragm 102, a back plate 101, a cavity 104 between the diaphragm 102 and the back plate 101, and a sound hole 103 located in the back plate 101, the diaphragm 102 and the back plate 101 The plate 101 is used to form a capacitor plate. Air enters the cavity 104 through the sound hole 103, and the air pressure generated by the sound causes the vibration of the diaphragm 102, thereby changing the capacitance, and finally causing a change in voltage. Among them, the parameters that affect the capacitance value mainly include the effective area of ​​the capacitor plates (that is, the diaphragm 102 and the bac...

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Abstract

The invention discloses a microphone structure and a manufacturing method thereof. The method comprises the following steps: providing a substrate which comprises a first surface; forming a vibrating membrane on the first surface and multiple discrete columnar bulges bulged on the vibrating membrane surface so as to form a vibrating membrane structure; forming a backboard structure above the vibrating membrane structure, wherein multiple sound holes are formed on the backboard, multiple sound holes penetrate the backboard structure and are in one-to-one correspondence to the columnar bulges, and partial high columnar bulges are located in the sound holes. Multiple discrete columnar bulges bulged on the vibrating membrane surface are formed, when partial high columnar bulges are located in the sound holes, the vibrating membrane vibrates along the vibration of the air pressure, and the distance between the vibrating membrane structure and the backboard structure is changed, the multiple discrete columnar bulges increase the active area variation between the vibrating membrane structure and the backboard structure, thereby increasing the variation of a capacitance value, and then increasing the variation of an output voltage to improve the sensitivity of the microphone.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a microphone structure and a manufacturing method thereof. Background technique [0002] A microphone is a conversion device that converts sound signals into electrical signals. It is a crucial device in an electroacoustic system. The performance of the microphone directly affects the sound quality of the electroacoustic system. With the development of wireless communication and multimedia technologies, microphones have been developed from electret capacitor microphones (Electret Capacitance Microphone, ECM) to micro electromechanical system (Micro Electro Mechanic System, MEMS) microphones. [0003] MEMS microphones are microphones based on MEMS technology. Compared with electret condenser microphones, MEMS microphones have stronger heat resistance, vibration resistance, and radio frequency interference capabilities. In order to meet the needs of portable electronic products With ...

Claims

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Application Information

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IPC IPC(8): H04R19/04H04R31/00
CPCH04R19/04H04R31/00
Inventor 王强石慧曾笑梅许谢慧娜
Owner SEMICON MFG INT (SHANGHAI) CORP
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