194results about How to "Increase the amount of change" patented technology

The invention discloses a miniature electric field sensor with special-shaped electrodes, which relates to the sensor technology. A sensor sensitive structure comprises a substrate, an exciting unit, a shielding electrode, an electric field induction electrode, an anchor point and other parts. The exciting unit comprises an exciting electrode and a support beam, which are symmetrically distributed at two sides of the sensor sensitive structure; and the shielding electrode and the electric field induction electrode are arranged in staggered form, and are distributed at a middle position region of the sensor sensitive structure. The exiting unit, the shielding electrode, the electric field induction electrode, the anchor point and the like are located in the same structural layer. The miniature electric field sensor provided by the invention comprises the special-shaped electric field induction electrode and shielding electrode, thus, charge changes of the electric field induction electrode in the sensor within unit time is increased, and the sensitivity of the miniature electric field sensor is improved.

An endoscope apparatus includes a front end section which is rigid, and a flexible tube which has a bent portion. One end of a tube which can be bent is fixed to a lens barrel which holds an optical mechanism having a movable section. The tube is extended in a longitudinal direction of the flexible tube of the endoscope apparatus, and at least a part of a shape memory element is accommodated inside the tube. One end of the shape memory element is fixed to an end of the tube, which is not fixed to the lens barrel, and the other end of the shape memory element is mechanically connected to the movable section of the optical mechanism which includes the movable section. Due to expansion (elongation) and contraction of the shape memory element, relative positions of the movable section of the optical mechanism which includes the movable section, and one end of the tube fixed to the lens barrel are changed.

A pressure sensor includes a base, a fixed electrode provided on the surface of the base, an insulating layer laminated on the fixed electrode to cover the fixed electrode, and a conductive diaphragm which is disposed to face the fixed electrode with a predetermined gap above the insulating layer. The pressure sensor detects a variation of a capacitance between the fixed electrode and the diaphragm by a deflection of the diaphragm when a pressure is applied to the diaphragm. A protrusion 3a protruding toward the diaphragm is formed on the insulating layer.

A synchronous motor includes a stator, a rotor and permanent magnets. The rotor includes a rotor iron core and rotatable relative to the stator, a plurality of conductor bars accommodated within corresponding slots in the rotor iron core. The conductor bars have their opposite ends shortcircuited by respective shortcircuit rings to form a starter cage conductor. The rotor also has a plurality of magnet retaining slots defined therein at a location on an inner side of the conductor bars, in which hole permanent magnets are embedded.

The stability of a step of processing a wiring formed using copper, aluminum, gold, silver, molybdenum, or the like is increased. Moreover, the concentration of impurities in a semiconductor film is reduced. Moreover, the electrical characteristics of a semiconductor device are improved. In a transistor including an oxide semiconductor film, an oxide film in contact with the oxide semiconductor film, and a pair of conductive films being in contact with the oxide film and including copper, aluminum, gold, silver, molybdenum, or the like, the oxide film has a plurality of crystal parts and has c-axis alignment in the crystal parts, and the c-axes are aligned in a direction parallel to a normal vector of a top surface of the oxide semiconductor film or the oxide film.

In a pressure control system having a solenoid-operated fluid valve that has an output hydraulic pressure which varies in accordance with a solenoid input signal, a dynamic learning block is configured to adjust the initial, default values for control points stored in a pressure-current (P-I) data table based on observed (measured) operating points that reflect the solenoid's actual transfer characteristic. A feed forward control block is configured to generate the solenoid input signal having a level based on the adjusted control points in the data table, which improves the accuracy of the solenoid input signal. An adjustment method uses a plurality of circular buffers each configured to store observed operating points falling within a respective range, and provides a mechanism to allow adjustment of the control points based on only partial data.

An apparatus for determining a failure of wheel speed sensors, which is capable of properly determining whether or not a wheel speed detection system including the wheel speed sensors has failed, if at least a wheel speed detected by the wheel speed sensors indicates a stopped state of a corresponding wheel. An engine rotational speed is detected, and an input-output rotational speed ratio of a torque converter of an automatic transmission mounted in the vehicle is calculated. A shift range of the automatic transmission is detected. Whether or not the vehicle is traveling is determined based on the engine rotational speed and the input-output rotational speed ratio when the automatic transmission is in a traveling range. It is determined that the wheel speed detection system including the wheel speed sensors has failed, if it is determined that the vehicle is traveling, and at the same time, at least one of wheel speed sensors indicates a stopped state of a corresponding one of the wheels.

To improve the reliability of a semiconductor device including a low-resistance material such as copper, aluminum, gold, or silver as a wiring. Provided is a semiconductor device including a pair of electrodes electrically connected to a semiconductor layer which has a stacked-layer structure including a first protective layer in contact with the semiconductor layer and a conductive layer containing the low-resistance material and being over and in contact with the first protective layer. The top surface of the conductive layer is covered with a second protective layer functioning as a mask for processing the conductive layer. The side surface of the conductive layer is covered with a third protective layer. With this structure, entry or diffusion of the constituent element of the pair of conductive layers containing the low-resistance material into the semiconductor layer is suppressed.

In a conductive sheet constituting a touch panel for use in a display device, it is possible to improve the transmittance of electrodes having meshes, to improve sensitivity of touch detection, and to suppress the occurrence of moire. A conductive sheet has an underlying first electrode and an overlying second electrode with a second sheet body as an insulating layer sandwiched therebetween. The first electrode and the second electrode respectively include a plurality of first cells and a plurality of second cells which are formed in a diamond shape by making thin wires and formed with metal wires intersect each other. The average cell pitch of the second cells is set to an integer multiple equal to or greater than two times and equal to or less than eight times the average cell pitch of the first cell.

The stability of steps of processing a wiring formed using copper or the like is increased. The concentration of impurities in a semiconductor film is reduced. Electrical characteristics of a semiconductor device are improved. A semiconductor device includes a semiconductor film, a pair of first protective films in contact with the semiconductor film, a pair of conductive films containing copper or the like in contact with the pair of first protective films, a pair of second protective films in contact with the pair of conductive films on the side opposite the pair of first protective films, a gate insulating film in contact with the semiconductor film, and a gate electrode overlapping with the semiconductor film with the gate insulating film therebetween. In a cross section, side surfaces of the pair of second protective films are located on the outer side of side surfaces of the pair of conductive films.

There is provided a multilayer made up of: a support member 11 with first electrodes 3 including a plurality of electrodes arranged parallel to each other and the second electrodes 4 including a plurality of electrodes that are arranged parallel to each other so as to cross the first electrodes 3; a protective layer (a front member) 12 that is provided opposite one side of the support member 11 and with which a predetermined position pointing member is brought into contact; and a reinforcing material (a rear member) 13 provided opposite the other side of the support member 11. A gas layer (space) 15 is provided between the first electrodes 3 or the second electrodes 4 and at least one of the support member 11, the protective layer (the front member) 12, and the reinforcing material (the rear member) 13, thereby blocking electrical coupling paths that increase electrostatic capacitance C.

The invention discloses a base station tunable antenna broadband and slow wave phase shifter. The base station tunable antenna broadband and slow wave phase shifter mainly comprises a phase shifting piece and a coupling piece, and is characterized in that the wave phase shifter mainly comprises a phase shifting medium piece and a phase shifting coupling piece; copper wholly covers one face of the phase shifting medium piece, and the other face comprises a three-slow-wave-structure circular-arc arm, a feeder line and a central phase output line; the two ends of the three-slow-wave-structure circular-arc arm are connected with antenna radiation units respectively; the central phase output line is connected with the feeder line; the other end of the central phase output line is connected with the antenna central phase radiation unit; a coupling arm is arranged on one face of the phase shifting coupling piece. The base station tunable antenna broadband and slow wave phase shifter adopts a slow wave structure and can guarantee enough phase shifting amount under the condition that the whole volume is smaller; seven paths of the antenna radiation units can be accessed at the same time and the use frequency section is wide; the base station tunable antenna broadband and slow wave phase shifter has the advantages of simple structure, convenience for assembling and the like.

The invention discloses a microphone structure and a manufacturing method thereof. The method comprises the following steps: providing a substrate which comprises a first surface; forming a vibrating membrane on the first surface and multiple discrete columnar bulges bulged on the vibrating membrane surface so as to form a vibrating membrane structure; forming a backboard structure above the vibrating membrane structure, wherein multiple sound holes are formed on the backboard, multiple sound holes penetrate the backboard structure and are in one-to-one correspondence to the columnar bulges, and partial high columnar bulges are located in the sound holes. Multiple discrete columnar bulges bulged on the vibrating membrane surface are formed, when partial high columnar bulges are located in the sound holes, the vibrating membrane vibrates along the vibration of the air pressure, and the distance between the vibrating membrane structure and the backboard structure is changed, the multiple discrete columnar bulges increase the active area variation between the vibrating membrane structure and the backboard structure, thereby increasing the variation of a capacitance value, and then increasing the variation of an output voltage to improve the sensitivity of the microphone.

Provided is a display device with high display quality. The display device includes a transistor over a substrate, an inorganic insulating film over the transistor, an organic insulating film over the inorganic insulating film, a capacitor electrically connected to the transistor, and a pixel electrode over the organic insulating film. The transistor includes a gate electrode over the substrate, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film in contact with one surface of the oxide semiconductor film, and a pair of conductive films in contact with the oxide semiconductor film. The capacitor includes a metal oxide film over the gate insulating film, the inorganic insulating film, and a first light-transmitting conductive film over the inorganic insulating film. The pixel electrode is formed of a second light-transmitting conductive film and in contact with one of the pair of conductive films and the first light-transmitting conductive film.

The invention relates to a five-degree-of-freedom parallel mechanism comprising a closed-loop branch chain. The whole mechanism of the mechanism is as shown in the drawing of the summary. The movableplatform and the fixed platform are connected by five active chains and one passive chain. The active branch chain is a triangular closed-loop structure, which is composed of one moving pair, two rotating pairs, one Hooke hinge and one compound spherical hinge. The passive branch chain is composed of nine Hooke hinges and one movable pair. The kinematic pairs of the two branch chains are connectedwith each other by rigid connecting rods. The connecting point of the movable platform and the active branch chain forms an axisymmetric pentagon, and the connecting point of the movable platform andthe passive branch chain is located in the middle of the platform. The connection point of the fixed platform and the passive branch forms a regular pentagon, and the connection point of the fixed platform and the passive branch is located at the center of the regular pentagon. The mechanism has the characteristics of large rigidity and high precision, and can realize the position and posture transformation of two rotation and three movement. It can solve the problems existing in the manual package, and fulfill the position and posture adjustment and propulsion requirements in the package process.

The invention discloses a flexible patch type sensing and driving integrated device, comprising sensing and driving layers and elastic electrode layers, which are alternatively laminated, and the bottom layer and the top layer are the elastic electrode layers, and the sensing and driving layers are dielectric elastomer films. The sensing and driving integrated device of the invention is simple in structure and easy to realize. As the sensing and driving layers and the elastic electrode layers are alternatively laminated according to the need, the deformation of the dielectric elastomer films caused by an external force is magnified, so that variable quantity of capacitance is increased, and the effects of increasing the sense measuring range and improving drive capability are achieved.

There is provided an inkjet printing apparatus. The inkjet printing apparatus includes a receiving unit configured to receive an instruction to perform check processing, and a controlling unit configured to cause a printing unit to eject a first coloring material ink, a second coloring material ink, and a clear ink so as to print a check pattern used for the check processing, wherein the printing unit prints the check pattern in which the clear ink, the first coloring material ink, and the second coloring material ink are applied to a check pattern forming area of the print medium in this order, and in the check pattern, the clear ink is colored in the second color and the first color in a direction from a surface side of the print medium toward a back side of the print medium in this order.

A miniaturized heat-resistant and high-dynamic pressure sensor comprises a sensor probe which is internally provided with a sensor chip, the sensor chip is fixed through a heat-resistant ceramic adhesive, the sensor probe is connected with a metal tungsten filament which passes through a seal plate, and the seal plate is connected with the sensor probe; the front end face of the sensor probe is provided with a pressure guidance hole which communicates with a pressure channel and a square sensor chip in the sensor probe, the rear end of the sensor chip installation groove is provided with a sensor vacuum chamber, and the side wall of the sensor probe is internally provided with a the metal tungsten filament taken as a lead terminal of the pressure sensor; the sensor chip is square-shaped, four sensitive resistors are arranged at the front surface of the sensor chip in the same direction, the back surface of the sensor chip is a square cavity corresponding to a square sensitive film, andthe pressure is applied to the square sensitive film through the pressure guidance hole. The miniaturized heat-resistant and high-dynamic pressure sensor is small in volume, resistant to heat and fast in response, and can be used for measurement of the total pressure and the static pressure.

The invention discloses a low g value capacitive MEMS accelerometer and a modal localization measurement circuit thereof. A capacitive MEMS acceleration sensor comprises a silicon-based mass block, a spring, capacitor plates, X, Y, and Z direction limit blocks, and capacitor plate electrodes. Four differential capacitors are formed by the capacitor plates and mass blocks. Through a first lead wire hole, a second lead wire hole and the capacitor plate electrodes, a differential capacitance signal is introduced into a modal localization circuit. A capacitance measurement system comprises an ASIC modal localization circuit, a reference voltage source, and a multi-phase clock source. The output current and capacitance of the ASIC modal localization circuit are approximately in a linear relationship. When a frequency analysis and data acquisition/retention module carries out sampling to obtain a modal frequency of the modal localization circuit, a response current signal is inputted into a DSP to carry out cache calculation via low pass filtering. A novel differential capacitance MEMS acceleration sensor and a modal localization measurement circuit which detects weak capacitive change are designed, and the high precision weak acceleration change is realized.

A circuit analyzing method of the present invention comprises the steps of (a) applying, for a characteristic having a variation width of characteristics of an element included in a circuit to be analyzed, any one of a maximum value and a minimum value of the variation width as a representative value of the characteristic of the element and (b) estimating a characteristic of the circuit to be analyzed, using the representative value.

The present invention provides a micro-machine magnetic field senor and an application thereof. The sensor at least comprises a resonance oscillator and an insulation layer and at least one layer of metal coil arranged on the surface of the resonance oscillator in order. An S-shaped folding beam is employed to realize the connection of an elastic beam and an anchor to ensure that the resonance oscillator is moved along the direction perpendicular to the resonance oscillator when the resonance oscillator is subjected to resonance and greatly improve the variation of a resonance beam in the enclosed area unit time compared to a square ring formed by a general dual-end fixed support beam so as to increase the variation of the magnetic flux in the metal coil and the sensitivity of a magnetic field. Besides, a grounding aluminium layer is added in the insulation layer of the metal coil to effectively avoid the problem that the signals of the resonance oscillator are coupled to the metal coil. The micro-machine magnetic field senor and the application thereof are simple in structure and reduce the loss of a device with no need for current communication on the metal coil; and moreover, the size of the magnetic field is measured through measurement of the induced electromotive force at two ends of the metal coil, and therefore the influence of the temperature is small.

Piezoelectric vibrating pieces are disclosed that have a base and a pair of vibrating arms extending from one end of the base in a designated direction. A respective groove is defined in each of the upper and lower surfaces of each vibrating arm. The grooves extend in the designated direction and have a first width. Each groove includes a respective rib feature having a second width that is narrower than the first width. A piezoelectric frame includes the piezoelectric device and an outer frame surrounding the device. A piezoelectric device includes the piezoelectric vibrating piece or piezoelectric frame, a lid, and a base.

An embodiment of the invention provides a method and device for determining control parameters of a counteracting branch circuit and a touch control detection device. The method includes inputting first constant signals to the counteracting branch circuit and inputting first excitation signals to a self-capacitance detecting branch circuit, wherein a rear end processing circuit of the self-capacitance detecting branch circuit at least performs differential treatment on output signals of the counteracting branch circuit and output signals of the self-capacitance detecting branch circuit determining phase delay sum generated when the self-capacitance detecting branch circuit and the rear end processing circuit of the self-capacitance detecting branch circuit respond to the first excitation signals according to the first output signals; inputting second constant signals to the self-capacitance detecting branch circuit and inputting second excitation signals to the counteracting branch circuit, wherein the rear end processing circuit of the self-capacitance detecting branch circuit at least perform differential treatment on output signals of the counteracting circuit and output signalsof the self-capacitance detecting branch circuit so as to obtain second output signals; determining phase delay generated by the rear end processing circuit in response to the second excitation signals according to the second output signals; determining control parameters of the counteracting branch circuit according to the phase delay sum and the phase delay generated by the rear end processingcircuit in response to the second excitation signals so as to at least counteract or reduce an original reference value of to-be-detected self capacitance.