A white light LED mixed light method and the light-emitting device made therefrom

A LED chip, white light technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of low special color rendering index R9 and R12, and achieve the effect of good color temperature uniformity, easy quality control, and large color temperature variation range.

CN106960899BActive Publication Date: 2019-06-07北京宇极芯光光电技术有限公司 +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Publication Date
2019-06-07

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Abstract

The invention relates to a white light LED light mixing mode and a prepared lighting device, and belongs to the LED technical field; the white light LED light mixing mode comprises an LED chip, and mixes the light of single phosphor luminescence excited by the LED chip; the LED chip is coated by the single phosphor or transparency packaging glue so as to form package bodies of different colors; the package bodies are welded on a PCB plate with a printing circuit according to certain rules; a multi-branch circuit can control the various color LED luminous intensity; the method can adjust the current output proportion of multi-path drive power supplies, thus realizing color temperature continuous changes of the white light mixed by 4 colors; the lighting device can realize the continuous adjustable output white light with the color rendering index Ra>=95, R9>=90, and color temperature and spectrum from 2700 to 7000K. In addition, the InGaN or GaN series semiconductor chip with stable performance and highly stable phosphor are employed, thus greatly improving the lighting device reliability.
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Description

technical field

[0001] The invention relates to the technical field of LEDs, in particular to a light-mixing method in which high color rendering and color temperature can be continuously adjusted by exciting a single phosphor powder through an LED chip, and a light-emitting device manufactured thereby. Background technique

[0002] In today's increasingly tense energy environment, compared with traditional fluorescent lamps and incandescent lamps, white LEDs, as a new type of lighting source, have significant advantages such as energy saving, environmental protection, short response time, and long life. At present, the LED industry is developing rapidly, the luminous efficiency is increasing year by year, and the price is decreasing year by year. White LEDs are gradually replacing fluorescent lamps and incandescent lamps and entering the home lighting market. At the same time, LED light sources have gradually entered professional markets such as film and television shooting...

Examples

Embodiment 1

[0051] Such as figure 1 As shown, the package device of this embodiment includes an LED chip 1 , two electrodes 2 and a package substrate 3 , and the two electrodes are respectively located at both ends of the package substrate 3 for leading out the positive and negative electrodes of the LED chip 1 .

[0052] In this embodiment, one of the InGaN or GaN series blue-light semiconductor chips whose luminous peak wavelength is between 450nm and 470nm is selected, and the power is about 0.5W.

[0053] The phosphor used in this embodiment:

[0054] The composition formula of red phosphor is: CaAlSi(ON) 3 : Eu, the peak wavelength of the emission spectrum is 640-660nm, and the half-maximum width is 80-120nm;

[0055] The composition formula of green phosphor powder is: Lu 3 al 5 o 12 : Eu, the peak wavelength of the emission spectrum is 515-530nm, and the half-maximum width is 90-120nm;

[0056] The composition formula of orange phosphor is: CaAlSi(ON) 3 : Eu, the peak wavele...

Embodiment 2

[0068] The white light emitting device of this embodiment includes a substrate with a printed circuit, an LED chip, an LED phosphor, and an LED encapsulation glue.

[0069] In this embodiment, one of the InGaN or GaN series blue-light semiconductor chips whose luminous peak wavelength is between 450nm and 470nm is selected, and the input power of a single chip can reach up to 18W.

[0070] The phosphor used in this embodiment:

[0071] The composition formula of red phosphor is: CaAlSi(ON) 3 : Eu, the peak wavelength of the emission spectrum is 640-660nm, and the half-maximum width is 80-120nm;

[0072] The composition formula of green phosphor powder is: Lu 3 al 5 o 12 : Eu, the peak wavelength of the emission spectrum is 515-530nm, and the half-maximum width is 90-120nm;

[0073] The composition formula of orange phosphor is: CaAlSi(ON) 3 : Eu, the peak wavelength of the emission spectrum is 605-620nm, and the half-maximum width is 65-80nm;

[0074] First, solder seve...

Embodiment 3

[0082] The white light emitting device of this embodiment is the same as the light emitting device shown in Example 1.

[0083] In this embodiment, one of InGaN or GaN series semiconductor chips with a luminous peak wavelength of 380nm-420nm is selected, and the power is about 0.5W.

[0084] The phosphor used in this embodiment:

[0085] The composition formula of red phosphor is: CaAlSi(ON) 3 : Eu, the peak wavelength of the emission spectrum is 640-660nm, and the half-maximum width is 80-120nm;

[0086] The composition formula of the green phosphor is: SiAlON:Eu, the peak wavelength of the emission spectrum is 525-550nm, and the half-peak width is 40-60nm;

[0087] The composition formula of orange phosphor is: CaAlSi(ON) 3 : Eu, the peak wavelength of the emission spectrum is 605-620nm, and the half-maximum width is 65-80nm;

[0088] The emission spectra of the four color packages are as Figure 7 shown.

[0089] By adjusting the current output ratio of the four drivi...