An Improved Large-Size Synthetic Sapphire Production Process
A production process and technology for sapphire, applied in the directions of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of low preparation efficiency, difficult process control, unsuitable sapphire preparation process, etc., to achieve high growth efficiency and improve preparation quality. , to achieve the effect of annealing and cooling efficiency
Inactive Publication Date: 2019-11-05
NINGXIA PROCRYSTAL TECH CO LTD
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Problems solved by technology
[0007] The purpose of the present invention is to: aim at the above-mentioned problems existing at present, propose a kind of large-size artificial sapphire production technology that is suitable for the preparation of large-size artificial sapphire, through the creative improvement of sapphire preparation process, improve the production efficiency of large-size sapphire, improve crystal Preparation quality, to solve the deficiencies and defects of the sapphire preparation process in the prior art that are not suitable for large-size crystal growth, difficult process control, and low preparation efficiency
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Embodiment 1
[0036] Example 1, such as Figure 1-3 Shown:
[0037] An improved large-scale artificial sapphire production process, comprising the steps of:
[0038] (1) Furnace body cleaning and preheating: Before crystal growth, first check whether there are foreign objects or sundries inside the furnace body, clean and remove impurities inside the furnace body, and turn on the power of the furnace body to preheat at 500°C for 2-3 hours. Clean up the flammable impurities existing in the furnace body, avoid the contamination inside the furnace body, affect the quality of the grown crystal, and improve the purity of the grown crystal; then lower the temperature of the furnace body to 20°C-30°C to facilitate the placement of the crucible;
[0039] (2) Raw material filling: use electronic scales to weigh quantitative Al 2 o 3 raw material, and the bulk Al 2 o 3 Raw materials and powdered Al 2 o 3 The raw material is placed in an iridium crucible; powdered Al 2 o 3 Raw materials and b...
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Abstract
The invention relates to the technical field of production of artificial sapphire, in particular to a production process of modified large-size artificial sapphire, mainly comprising the steps of (1) washing and preheating a furnace; (2) filling with a raw material; (3) fitting seed crystal; (4) evacuating; (5) heating the furnace; (6) charging the seed crystal; (7) growing by necking; (8) growing under equal diameter; (9) annealing; (10) cooling. The production process employing nitrogen cycle assisted temperature regulation is novel in terms of sapphire crystal growth techniques; compared with the traditional artificial sapphire crystal production process, the production process according to the technical scheme of the invention is more conducive to the growth of large-size sapphire crystal, the growth efficiency is higher, and process control is easy.
Description
technical field [0001] The invention relates to the technical field of artificial sapphire preparation, in particular to an improved large-scale artificial sapphire production process. Background technique [0002] The English name of sapphire is Sapphire, which comes from the Latin Spphins, which means blue; it belongs to the corundum group of minerals and has a trigonal crystal system. In the gem world, all kinds of gem-quality corundum other than ruby are called sapphires. Sapphires and rubies, emeralds, bodhi tourmalines, and tanzanites all belong to the genus of colored gemstones. [0003] Because corundum contains trace elements such as iron (Fe) and titanium (Ti), it presents blue, sky blue, light blue and other colors, among which bright sky blue is the best. The mineral name of sapphire is corundum, which belongs to the corundum group of minerals. In fact, gem-grade corundum in nature is called sapphire except for the red one called ruby, and other colors such ...
Claims
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IPC IPC(8): C30B29/20C30B15/20C30B15/32C30B15/36
CPCC30B15/20C30B15/32C30B15/36C30B29/20
Inventor 胡明理李业林杨博王春刚李伟国
Owner NINGXIA PROCRYSTAL TECH CO LTD