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Method of Operation of Non-Volatile Memory System

A memory system, non-volatile technology, used in memory systems, static memory, read-only memory, etc., can solve problems such as programming interference, charge loss, and data loss

Active Publication Date: 2022-03-08
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Flash memory devices are non-volatile memory devices, but will lose data stored in them due to various factors such as temperature, read disturb, program disturb, and loss of charge

Method used

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  • Method of Operation of Non-Volatile Memory System

Examples

Experimental program
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Embodiment Construction

[0031] Hereinafter, example embodiments of the inventive concept will be described with reference to the accompanying drawings.

[0032] A non-volatile memory system according to example embodiments may adjust a eviction policy based on a type of error of a source block. Accordingly, a nonvolatile memory system with improved reliability and performance is provided.

[0033] figure 1 is a block diagram illustrating a non-volatile memory system according to example embodiments. refer to figure 1 , the nonvolatile memory system 100 may include a memory controller 110 and a nonvolatile memory device 120 . Each of the memory controller 110 and the nonvolatile memory device 120 may be implemented with one chip, one package, or one module. In example embodiments, the non-volatile memory system 100 may be a mass storage medium or storage device, such as a solid-state drive (SSD), a memory card, and a memory stick.

[0034] The memory controller 110 may control the nonvolatile mem...

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PUM

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Abstract

Methods of operation of a non-volatile memory system are provided. The method includes selecting a source block of a memory block, performing a cell count with respect to the selected source block based on a reference voltage, and performing a reclaim operation on the source block based on the cell count result.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2015-0178371 filed in the Korean Intellectual Property Office on December 14, 2015, the entire contents of which are hereby incorporated by reference. Background technique [0003] Methods consistent with the present disclosure relate to semiconductor memory, and more particularly, to methods of operating non-volatile memory systems. [0004] The semiconductor memory is implemented by using semiconductors such as silicon (Si), germanium (Ge), gallium arsenide (GaAs), indium phosphide (InP), and the like. Semiconductor memory devices are roughly classified into volatile memory devices and nonvolatile memory devices. [0005] Volatile memory devices are memory devices that lose data stored therein when power is removed. Volatile memory devices include static random access memory (SRAM), dynamic RAM (DRAM), synchronous DRAM, and the like. A non-volati...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/34G06F12/02
CPCG06F12/0246G06F12/0253G11C16/3459G11C16/26G11C16/32G11C16/349G06F11/1048G06F3/0608G06F3/064G06F3/0679G06F11/1044
Inventor 朴永昊
Owner SAMSUNG ELECTRONICS CO LTD