Unlock instant, AI-driven research and patent intelligence for your innovation.

Sputtering device component with modified surface and method of making

A technology of sputtering and sputtering targets, which is applied in the field of particle traps and its preparation, and can solve problems such as damage to film performance and falling into

Inactive Publication Date: 2017-08-15
HONEYWELL INT INC
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Problems can occur if particles form during the deposition process because the particles can fall into or onto the deposited film and destroy the desired film properties

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Sputtering device component with modified surface and method of making
  • Sputtering device component with modified surface and method of making
  • Sputtering device component with modified surface and method of making

Examples

Experimental program
Comparison scheme
Effect test

example 1 and 2

[0054] In two examples, titanium sputtering target assemblies were formed having particle trap features surrounding the sputtering surface. In a first step, the sputtering target is subjected to CNC lathe processing, which forms surface roughness with a macrostructure on the surface of the sides of the sputtering target to form particle traps. The height of the macrostructure of the surface above the sides of the sputter target after applying CNC lathing is shown in Table 1 below. The macrostructure is then subjected to a sandblasting step to add the microstructure to the macrostructure. The overall height of roughness including macrostructure and microstructure after the blasting step is shown in Table 1 below. Finally, sputtering target with dilute HF / HNO 3 Solution processing for final chemical processing steps. Multiple samples with different roughness values ​​were prepared for each example. Tables 1 and 2 contain the height values ​​of the surface roughness of the su...

example 3

[0064] In a third example, the method disclosed above was performed on a sample Ti target and an image was provided to show the location of the measurement and show certain features. Such as Figure 9 As shown in , the surface of a particle trap may contain surface roughness characterized by macrostructures 300 defined as the overall configuration of the surface. The macrostructure can be measured as having a height 310, also referred to as a profile above the surface. For example, the macrostructure may define valleys 304 or troughs for depressions, and peaks 302 or vertices for protrusions. A height 310 of macroscopic roughness Ra is measured from the bottom of valley 304 to the top of peak 302 . Thus, macrostructure 300 is measured over a surface area large enough to contain at least one repeating unit of the macrostructure, such as over an area that includes both valleys 304 and peaks 302 . Such as Figure 9 As shown in , localized regions 320 of the surface may be rel...

example 4

[0072] In a fourth embodiment, particle traps were formed on the sides of the sputter target using the method disclosed above. obtained from FEI using TM (Hillsboro, OR) scanning electron microscope images of particle traps at different magnifications. Photographs of particle traps used to form Figures 13A-13C , 14A-14C and 15A-15C.

[0073] Figure 13A A sputtering target surface that has been machined by a CNC lathe for surface treatment is shown at a first magnification. CNC lathing creates protrusions 380 that constitute macrostructures on the sides of the sputter target and form particle traps with surface roughness. Such as Figure 13A As shown in , macrostructure-forming protrusions 380 protrude from the surface of the sputtering target and form an overall surface profile having a first height. From Figure 13A The protrusions appearing in the range are about 1100 μm apart. The protrusions 380 form parallel lines to each other when viewed relative to the plane ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A sputtering target assembly for use in a vapor deposition apparatus, the sputtering target assembly comprising a sputtering surface; a sidewall extending from the sputtering surface at an angle to the sputtering surface; a particle trap formed of a roughness located along the sidewall and extending radially from the sputtering surface, wherein the roughness of the particle trap has a macrostructure and a microstructure.

Description

technical field [0001] The present invention relates to particle traps for use in sputtering chambers and methods of making them. More particularly, the present invention relates to certain aspects of forming roughened surfaces on chamber components exposed to a deposition environment. The rough surface may be formed, for example, on a surface of a sputter target or a sputter target assembly surrounding the sputter surface. Background technique [0002] Deposition methods are used to form films of material across the surface of a substrate. Deposition methods are used, for example, in semiconductor fabrication processes to form metallization layers in the fabrication of integrated circuit structures and devices. One exemplary deposition method suitable for use herein is physical vapor deposition ("PVD"). [0003] PVD methods include, for example, sputtering processes. The PVD sputtering method is widely used to form thin films of materials on various substrates. figure ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34
CPCC23C14/3407C23C14/564H01J37/32871H01J37/3426H01J37/3423H01J37/3491H01J37/3414
Inventor J·金P·K·昂德伍德S·D·斯特罗瑟斯M·D·佩顿S·R·塞尔斯
Owner HONEYWELL INT INC