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LED chip with high light emitting efficiency and preparation method thereof

An LED chip and light technology, which is applied to electrical components, circuits, semiconductor devices, etc., can solve problems such as inability to be effectively extracted, and achieve the effects of improving the light extraction efficiency, the method is simple and feasible, and the cost of the preparation process is low.

Inactive Publication Date: 2017-08-18
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

In addition, Aurélien David simulations show that most of the light radiated from the active area of ​​the LED is confined to the waveguide mode, and about 66% of the light is confined in the GaN epitaxial layer and cannot be effectively extracted

Method used

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  • LED chip with high light emitting efficiency and preparation method thereof
  • LED chip with high light emitting efficiency and preparation method thereof
  • LED chip with high light emitting efficiency and preparation method thereof

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preparation example Construction

[0042] If a reflective layer is covered on the LED chip, the front-mounted LED chip can become an LED chip emitting light from the back, such as a flip-chip LED chip or a vertical LED chip. Therefore, in combination with the above content, the present invention proposes a method for preparing an LED chip with high light emission efficiency, such as figure 2 shown, including the following steps:

[0043] S1. Prepare an epitaxial layer on the substrate from bottom to top;

[0044] S2. Etching the epitaxial layer downwards, forming etching grooves and light emitting platforms at the same time;

[0045] S3. Prepare an insulating layer or a reflective layer on the surface of the light-emitting table and the inner surface of the etching groove.

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Abstract

The invention discloses an LED chip with high light emitting efficiency and a preparation method thereof, wherein the LED chip and the preparation method thereof relate to the technical field of semiconductor preparation. The LED chip provided by the invention comprises light emitting tables and a plurality of etching grooves between adjacent light emitting tables, thereby effectively enlarging a light emitting surface, changing propagation direction of waveguide light in an epitaxial layer of the LED chip and improving light emitting efficiency. Furthermore, a reflecting layer covers bottom or sidewall of each etching groove, and the waveguide light in the epitaxial layer can be reflected to the bottom of the chip. The LED chip is suitable for the LED chip with back side emitting, such as a reversely mounted chip and a vertical chip, thereby satisfying a requirement for multiple types of LED chips. The invention further provides the preparation method of the corresponding LED chip. The preparation method has advantages of simple preparation process and low cost. Furthermore the preparation method facilitates preparation and industrial application of the LED chip.

Description

technical field [0001] The invention belongs to the technical field of semiconductor preparation, and in particular relates to an LED chip with high light emission efficiency and a preparation method thereof. Background technique [0002] LED semiconductor light-emitting chips (that is, LED chips) play a huge role in white light lighting, optical communications, polymer curing, sterilization and disinfection. For example, GaN-based LED wavelengths cover green, blue, violet, ultraviolet and other bands, and have significant advantages such as low energy consumption, long life, and fast response time, and have huge market value and potential application value. [0003] LED semiconductor light-emitting chips (that is, LED chips) are usually epitaxial semiconductor layers such as n-type layer, light-emitting region and p-type layer on a homogeneous or heterogeneous substrate. These semiconductor layers have high refractive index, such as in GaN-based LEDs. The refractive index ...

Claims

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Application Information

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IPC IPC(8): H01L33/20H01L33/46H01L33/38H01L33/00
CPCH01L33/0062H01L33/0075H01L33/20H01L33/38H01L33/46H01L2933/0016H01L2933/0025
Inventor 郭亚楠张韵闫建昌王军喜李晋闽
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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