Power semiconductor modules with short-circuit failure mode

Abstract

A power semiconductor module is described that can transition from a normal operation mode to an explosion-free robust short-circuit failure mode. The power semiconductor module comprises power semiconductors which have metallizations which form potential regions and are separated by insulators and passivations on the top side of the power semiconductors. Furthermore, an electrically conductive connecting layer is provided, on which at least one metal shaped body is arranged, which has a low lateral resistance and is significantly thicker than the connecting layer, the at least one metal shaped body Coating takes place by sintering the connecting layer, so that the metal shaped body is adhesively connected to the corresponding potential region. The metal forming body is embodied and designed with means for laterally homogenizing the current flowing through the metal forming body in such a way that a lateral current flow component is maintained until the module is switched off in order to avoid explosion.

Description

technical field [0001] The invention relates to a power semiconductor module and a power semiconductor structure comprising such a power semiconductor module with a robust short-circuit failure mode. Background technique [0002] In power electronics, semiconductor components such as, for example, insulated gate bipolar transistors (IGBTs) are used in various applications, such as, for example, in control units for wind power installations. The advantages of IGBT are good channel characteristics, high reverse voltage and certain robustness. IGBTs take advantage of field-effect transistors driven with almost no power and are also somewhat robust against short circuits because the IGBT limits the load current. [0003] During operation of power semiconductor modules, overloads and failures may occur due to various reasons such as eg external faults. In the event of a fault in a power semiconductor module having a top-side connection by means of a bonding wire, arcs often occ...

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Problems solved by technology

However, for IGBTs, this type of design is not conventional and cannot be easily applied to the design of IGBTs

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