An array substrate and its preparation method, detection method and display device

Abstract

The invention provides an array substrate, a preparation method thereof, and a display device. The array substrate includes a first conductive layer, a first insulating layer, and a second conductive layer stacked on the base in sequence along a direction away from the base, a first via hole is opened in the first insulating layer, and a detection structure is also included. It is formed in the first conductive layer, the first insulating layer and the second conductive layer, and is used for detecting whether there is a residue of the material of the first insulating layer in the first via hole. The array substrate can detect the residue of the insulating material in the first via hole in the first insulating layer in time through the detection structure formed in the first conductive layer, the first insulating layer and the second conductive layer, so that The poor connection between the first conductive layer and the second conductive layer caused by the residual insulating material in the first via hole can be detected as early as possible, thereby avoiding the waste of production cost and production capacity caused by detection after the array substrate is prepared.

Description

technical field [0001] The present invention relates to the field of display technology, in particular, to an array substrate, a manufacturing method thereof, and a display device. Background technique [0002] With the maturity of display devices, the demand for oxide active layers is getting higher and higher. Oxide semiconductors, as active layer materials, have the advantages of high carrier mobility, low preparation temperature, excellent large-area uniformity, and high optical transmittance compared with traditional amorphous silicon (a-Si) materials. It is determined that the oxide thin film transistor (Oxide TFT) is suitable for the preparation of high-resolution TFT-LCD, AM-OLED, flexible display, transparent display and other new display devices. [0003] In the existing oxide active layer array substrate, due to the needs of testing and normal display, the gate metal layer lead is usually connected to the source and drain metal layer in the non-display area. In t...

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Problems solved by technology

However, with the fluctuation of the process, the gate insulating layer material residue (GI remain) in the via hole is easy to appear in the etching process after the gate insulating layer is exposed, and the existing process lacks the defect of GI remain. Effective detection method, GI remain defects can only be detected by inputting test signals in the final test (array test) after the array substrate is prepared, and then the defects can be processed

[0004] Since the gate insulating layer is a transparent film layer, it is difficult for ordinary optical detection equipment (PI / AOI / MM, etc.) The material of the gate insulating layer in the via hole remains; for the array substrate with GI remain, continuing to manufacture subsequent film layers (such as 1ITO / PVX / 2ITO) will cause a great waste of production cost and production capacity, and the array substrate with GI remain cannot Repair, only scrap

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