Manufacturing method of tft substrate

Abstract

The invention provides a method for manufacturing a TFT substrate. First, a graphene semiconductor active layer is formed on a metal foil, and then an inorganic insulating layer and an organic substrate are sequentially formed on the graphene semiconductor active layer. By turning up and down, the The metal foil is located on the uppermost layer, and then a photoresist layer is formed on the metal foil through a patterning process, and the metal foil is etched to obtain a source electrode and a drain electrode, and then the photoresist layer and the graphene semiconductor have An organic insulating layer and a gate conductive layer are sequentially formed on the source layer, and finally the photoresist layer is removed by a photoresist stripper and the organic insulating layer and the gate conductive layer are taken away to obtain a patterned gate insulating layer and gate ; The production method re-uses the metal foil used for depositing the graphene film as the electrode material for the source and drain by turning it upside down, so as to reduce the cost and simplify the process, and through the stripping process, only one The photomask can be patterned source, drain and gate.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a method for manufacturing a TFT substrate. Background technique [0002] In the active matrix display technology, each pixel is driven by a Thin Film Transistor (TFT) integrated behind it, so that high-speed, high-brightness, and high-contrast screen display effects can be achieved. A common TFT is usually composed of gate / source / drain (Gate / Source / Drain) three electrodes, an insulating layer and a semiconductor layer. [0003] Graphene, as the thinnest and hardest nanomaterial known in the world, has become one of the current research hotspots because of its good electrical conductivity, mechanical properties, and thermal conductivity. Graphene, as a new material with extremely thin and extremely high conductivity, has great potential to be applied to electronic components / transistors. According to reports, graphene films have extremely low sheet resistance (<100Ω / □). How...

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Problems solved by technology

However, at present, for large-scale preparation of graphene, the more commonly used technology for obtaining graphene with better performance is mainly chemical vapor deposition (Chemical Vapor Deposition, CVD). The process of making TFT devices by this method is mainly as follows: For example, graphene is deposited on copper / nickel by CVD, and then the metal substrate is etched to obtain a graphene film, and then the graphene film is transferred to the substrate on which the required film has been deposited by roll to roll (Roll to Roll) or other methods , so as to assemble into a TFT device, this method has the disadvantages of long cycle, complicated process, and high cost of metal substrate

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