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Reverse blocking type gallium nitride device

A gallium nitride, reverse resistance technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of device silicon process incompatibility, surface state generation, large dynamic resistance, etc.

Active Publication Date: 2017-09-15
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, conventional reverse-resistance AlGaN / GaN heterojunction high electron mobility transistors have ohmic contacts, which require heavy metals such as gold and are prepared under high temperature conditions, making the device incompatible with traditional silicon processes
And during the high-temperature ohmic annealing process, the surface of the device will be oxidized, which will lead to the generation of surface states
These surface traps trap electrons, resulting in a large dynamic resistance during dynamic switching of the device

Method used

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  • Reverse blocking type gallium nitride device
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Embodiment Construction

[0020] Below in conjunction with accompanying drawing, describe technical scheme of the present invention in detail:

[0021] Such as figure 1 As shown, it is a reverse-resistance gallium nitride device of the present invention, which includes a substrate 1, a GaN layer 2, and an MGaN layer 3 that are sequentially stacked from bottom to top, and the GaN layer 2 and MGaN layer 3 form a heterojunction; Said M is a Group III element other than Ga; one end of the upper surface of the MGaN layer 3 has a drain metal 5, and the drain metal 5 forms a Schottky barrier contact with the MGaN layer 3; it is characterized in that, in the The other end of the MGaN layer 3 has an insulating gate structure 6, the insulating gate structure 6 is composed of an insulating gate dielectric 8 and a metal gate electrode 9, wherein the metal gate electrode 9 is located in the insulating gate groove 7, and the insulating gate recess The groove 7 is a groove that runs through the MGaN layer 3 and exte...

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Abstract

The invention belongs to the technical field of a semiconductor, and specifically relates to a reverse blocking type gallium nitride device. For solving the problems of non-compatibility between the conventional reverse blocking type AlGaN / GaN heterojunction high-electron-mobility transistor and the conventional silicon CMOS process, high device preparation temperature and the like, the invention provides the ohmic-contact-free reverse blocking type gallium nitride device. The reverse blocking type gallium nitride device provided by the invention has the advantages of compatibility with the conventional silicon process, low-temperature preparation and the like.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a reverse-resistance gallium nitride device. Background technique [0002] Power electronics technology is an important supporting technology for modern science, industry and national defense. Among them, power semiconductor devices are not only the foundation of power electronics technology, but also a powerful driving force for the development of power electronics technology. The development of power semiconductor devices plays a decisive role in the development of power electronics technology. . Among them, new power semiconductor devices represented by power MOS field effect transistors (MOSFETs) and insulated gate transistors (IGBTs) occupy a dominant position and play an important role in the fields of 4C electronic products, industrial control, and national defense equipment. However, power MOSFET devices based on silicon materials are increasingly show...

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Application Information

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IPC IPC(8): H01L29/47H01L29/778
CPCH01L29/475H01L29/7787
Inventor 陈万军刘杰施宜军李茂林崔兴涛刘超周琦张波
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA