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Nonvolatile memory based on metal organic perovskite materials and preparation method

A perovskite material and metal organic technology, applied in the field of memory, can solve the problems of difficult regulation, poor mechanical properties, small switching, etc., and achieve the effect of large switching ratio and high mechanical performance

Inactive Publication Date: 2017-09-19
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the above deficiencies in the prior art, the object of the present invention is to provide a flexible non-volatile memory based on a metal organic perovskite material and a preparation method, aiming at solving the problem of poor mechanical properties of the existing non-volatile memory. The switch is relatively small, insufficient stability, difficult to adjust and other problems

Method used

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  • Nonvolatile memory based on metal organic perovskite materials and preparation method
  • Nonvolatile memory based on metal organic perovskite materials and preparation method
  • Nonvolatile memory based on metal organic perovskite materials and preparation method

Examples

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Effect test

Embodiment 1

[0055] Mix methyl halide amine with 0.4 mmol lead halide in a molar ratio of 1.0 and dissolve it in 10 mL of dimethylformamide, stir and react for 12 hours to obtain CH 3 NH 3 wxya 3 solution; a 100 nm thick aluminum electrode is used on the PET plastic substrate to form a metal film bottom electrode through a mask in the form of thermal evaporation, and polymethyl methacrylate is spin-coated on the metal film bottom electrode to form the first polymer layer, followed by annealing at 100°C for 1 h; spin-coat CH on top of the annealed first polymer layer 3 NH 3 wxya 3 solution, forming CH 3 NH 3 wxya 3 layer; in CH 3 NH 3 wxya 3 Spin-coat polymethyl methacrylate on top of the second polymer layer to form a second polymer layer; on the second polymer layer, a 100nm-thick aluminum electrode is thermally evaporated to form a metal thin film top electrode, and finally a CH-based 3 NH 3 wxya 3 flexible non-volatile memory.

Embodiment 2

[0057] Methyl halide amine was mixed with 0.3 mmol lead halide in a molar ratio of 1.1 and dissolved in 12 mL of dimethylformamide, stirred for 10 hours to obtain CH 3 NH 3 wxya 3 solution; adopt 80nm thick copper electrode on the PET plastic substrate to form the bottom electrode of the metal film through the mask plate in the form of thermal evaporation, spin-coat polystyrene on the bottom electrode of the metal film to form the first polymer layer, and then Anneal at 90°C for 2h; spin-coat CH on the annealed first polymer layer 3 NH 3 wxya 3 solution, forming CH 3 NH 3 wxya 3 layer; in CH 3 NH 3 wxya 3 Spin-coat polystyrene on top of the second polymer layer to form a second polymer layer; on the second polymer layer, an 80nm-thick copper electrode is thermally evaporated to form a metal thin film top electrode, and finally a CH-based 3 NH 3 wxya 3 flexible non-volatile memory.

[0058] In summary, the present invention provides a flexible non-volatile memory b...

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Abstract

The invention discloses a nonvolatile memory based on metal organic perovskite materials and a preparation method. The nonvolatile memory comprises a flexible substrate and a metal thin film bottom electrode, a first polymer layer, a CH3NH3PbX3 layer, a second polymer layer, and a metal thin film top electrode that are arranged on the flexible substrate successively from the bottom to the top, and the metal thin film bottom electrode and the metal thin film top electrode are composed of metal materials having the extension property. The CH3NH3PbX3 and the polymer are made into an active layer by means of a sandwich structure to prevent the CH3NH3PbX3 from contacting with the water and oxygen in air, so that the stability of the memory can be improved; meanwhile, the number of capture sites and the charge / discharge energy are changed by simply adjusting the CH3NH3PbX3 size, and the controllability of the electrical performance and storage performance of the memory can be finally realized; and the CH3NH3PbX3 and the polymer are combined to realize good flexible performance, so that the high mechanical property of the memory can be realized.

Description

technical field [0001] The invention relates to the field of memory, in particular to a flexible nonvolatile memory based on a metal organic perovskite material and a preparation method. Background technique [0002] Non-volatile memory (NVRAM) is a type of random access memory that retains information even in power-off mode. As the best candidate for a new generation of non-volatile memory, resistive random access memory (RRAMs) is regarded as a new technology most likely to replace flash memory. By using the resistance adjustable material as the active layer, a layer of organic polymer is spin-coated on the upper and lower sides to form a sandwich structure sandwiched between two electrodes to form a resistive random access memory. Although there are many researches on non-volatile memory at present, the existing non-volatile memory still has many shortcomings such as poor mechanical properties, small switches, insufficient stability, and difficult regulation. [0003] T...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/881H10N70/011
Inventor 周晔王燕韩素婷
Owner SHENZHEN UNIV
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