Solar cell silicon wafer diffusion furnace capable of achieving residual thermal stress relieving treatment

Abstract

The invention discloses a cell silicon wafer diffusion furnace capable of achieving residual thermal stress relieving treatment. The solar cell silicon wafer diffusion furnace comprises a furnace body. An air feeding pipeline and an air discharging pipeline both communicating the outside to the inside are arranged in the furnace body, and an exhaust fan is arranged on the air discharging pipeline.A quartz boat for setting silicon wafers and a setting end face are both arranged in the furnace body. A furnace door is arranged on the setting end face; a radiating pipeline extending to the outside of the furnace body is arranged between the edge of the setting end face and the furnace door. In the furnace body, a plurality of radiating ports communicated with the radiating pipeline are arranged on the air discharging pipeline, and are distributed uniformly axially along the radiating pipeline. According to the solar cell silicon wafer diffusion furnace capable of achieving residual thermal stress relieving treatment, residual thermal stress of the insides of silicon wafers can be relieved effectively in the process of annealing of silicon wafers to guarantee completeness of the silicon wafers.

Description

technical field [0001] The invention relates to the field of preparation of solar cells, in particular to a silicon wafer diffusion furnace for solar cells that can realize residual thermal stress relief treatment. Background technique [0002] Solar energy is a clean, non-polluting and renewable energy that can be recycled. Converting solar energy into electrical energy is an important technology for effectively utilizing solar energy. Since Bequeral first discovered the photovoltaic effect in 1839 to 1954 when Bell Labs developed a monocrystalline silicon solar cell with an efficiency of 4.5%, the market is still growing at a rate of about 36% per year. At present, the solar cell has completed the first The first-generation crystalline silicon battery research is at the peak of the second-generation thin-film battery research, and efforts are being made to the third-generation high-efficiency battery research. As a crystalline silicon solar cell that occupies most of the ...

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Problems solved by technology

However, after the existing diffusion furnace completes the diffusion process, it often directly takes out the silicon wafer from the diffusion furnace; the working temperature in the diffusion furnace often reaches 800 to 950°C, and the silicon wafer is directly taken out from the above temperature environment to room temperature. During the process, the internal thermal stress of the silicon wafer is difficult to eliminate during the processing process. The residual thermal stress in the silicon wafer is easily damaged or even broken under the influence of sudden temperature changes, which in turn affects the production and production of the silicon wafer. Processing process

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