Positive-polarity high-brightness AlGaInP light-emitting diode and manufacturing method thereof
A light-emitting diode, high-brightness technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of poor heat dissipation and light absorption of gallium arsenide substrates, and achieve the effects of high pass rate, increased light extraction efficiency, and reasonable process.
Active Publication Date: 2017-09-22
YANGZHOU CHANGELIGHT
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[0006] The purpose of the present invention is to provide a positive polarity high-brightness AlGaInP light-emitting diode that can solve the problem of poor heat dissipation of the gallium arsenide substrate and light absorption of the n-GaAs ohmic contact layer
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[0043] 1. Preparation process:
[0044] 1. On the GaAs substrate 100 of the epitaxial layer substrate with a thickness of 250-350 μm, the n-GaAs buffer layer 101, the GaInP barrier layer 102, the n-GaAs ohmic contact layer 103, n-AlGaInP confinement layer 104, MQW active layer 105, p-AlGaInP confinement layer 106, p-GaP current spreading layer 107.
[0045] Wherein the thickness of the n-GaAs ohmic contact layer 103 is preferably 30-60 nm, and its silicon doping concentration is preferably 1×10 19 cm -3 Above, the p-GaP current spreading layer 107 is doped with magnesium, and the magnesium doping concentration is 8×10 17 cm -3 ~1×10 19 cm -3 , The thickness of the p-GaP current spreading layer 107 is 2-5 μm.
[0046] Clean the surface of the p-GaP current spreading layer 107 with 511 solution for the chip made by epitaxy, and then deposit SiO with a thickness of 500nm by PECVD. 2 Layer 108, an aluminum layer 109 with a thickness of 3 μm was deposited by electron beam ev...
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Abstract
The invention provides a positive-polarity high-brightness AlGaInP light-emitting diode and a manufacturing method thereof and belongs to the technical field of LED production and application. One side of a permanent substrate is provided with a metal bonding layer, an n-GaAs ohmic contact layer, an n-AlGaInP limit layer, an MQW active layer, a p-AlGaInP limit layer and a p-GaP current expansion layer in sequence; a P electrode and a transparent conductive layer are arranged on the p-GaP current expansion layer; and a hemispherical roughing layer is arranged uniformly on the surface, facing to the transparent conductive layer, of the p-GaP current expansion layer. A light-emitting layer and the P electrode form a good conductive layer, and a composite layer made of a gradual refractive index material is formed, so that light output efficiency of each component can be further improved, and luminous efficiency of the LED is improved.
Description
technical field [0001] The invention belongs to the technical field of LED production and application, in particular to a manufacturing process of AlGaInP light emitting diodes. Background technique [0002] The technologies for improving the light extraction efficiency of light-emitting diodes can be roughly divided into two categories: [0003] One type improves the luminous efficiency by changing the epitaxial growth structure, for example: using a Bragg reflector (Distributed Bragg Reflector, DBR) to grow in the AlGaInP LEDs device structure to increase the reflectivity of light, where the Bragg reflector is formed by repeated stacking of two materials One is a high-refractive-index material with a thickness of λ / 4, and the other is a low-refractive-index material with a thickness of λ / 4. In order to improve its reflectivity, the refractive index difference (Δn) between the two types of materials must be maximized , to reflect the photons generated by the light-emitting...
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IPC IPC(8): H01L33/00H01L33/10H01L33/30H01L33/62
CPCH01L33/0066H01L33/10H01L33/305H01L33/62
Inventor 肖和平王宇李威王瑞瑞宗远
Owner YANGZHOU CHANGELIGHT