Complementary depletion type MOSFET rectifier diode based on NP channels

Abstract

The invention discloses a complementary depletion type MOSFET rectifier diode based on NP channels in the field of diodes. The complementary depletion type MOSFET rectifier diode comprises a depletion type NMOS tube M1, a depletion type PMOS tube M2 and a Schottky diode D1 with low turn-on voltage, wherein the drain electrode of the depletion type NMOS tube M1 is connected to the negative side of the diode D1; the drain electrode of the depletion type PMOS tube M2 is connected to the positive side of the diode D1; the grid electrode of the depletion type NMOS tube M1 is connected to the positive side of the diode D1; and the grid electrode of the depletion type PMOS tube M2 is connected to the negative side of the diode D1. The complementary depletion type MOSFET rectifier diode has high performance in the aspects such as low-power sensitivity, high-power capacity and reduction of reverse leakage current, and NP channel depletion type MOS tubes are connected at two ends of the Schottky diode D1 with low turn-on voltage, so that the diode D1 has relatively high cut-off voltage under the premise of low turn-on voltage holding, the effect of protecting the diode D1 from being punctured is achieved preferably, and the complementary depletion type MOSFET rectifier diode can be used for diodes in wireless charging circuits.

Description

technical field [0001] The invention relates to a diode, in particular to a rectifying diode based on the application of wireless energy transmission. Background technique [0002] In wireless energy transmission applications, Schottky diodes with low turn-on voltage are often used to improve high rectification efficiency at low power input levels; however, due to the limitations of semiconductor processes, it is difficult for Schottky diodes with low turn-on voltage to achieve higher The cut-off voltage of the Schottky diode, which has strong low power sensitivity, is difficult to achieve high power capacity. In some wireless energy transfer applications that require a wide power dynamic range, Schottky diodes with low turn-on voltage are not suitable. At the same time, the semiconductor process determines that the Schottky diode with low turn-on voltage has a large saturation current, that is, reverse leakage current, which reduces the rectification efficiency of the rect...

AI Technical Summary

Problems solved by technology

[0002] In wireless energy transmission applications, Schottky diodes with low turn-on voltage are often used to improve high rectification efficiency at low power input levels; however, due to the limitations of semiconductor processes, it is difficult for Schottky diodes with low turn-on voltage to achieve higher The cut-off voltage of the Schottky diode, which has a strong low power sensitivity, is difficult to achieve high power capacity

In some wireless energy transfer applications that require a wide power dynamic range, Schottky diodes with low turn-on voltage are not suitable

At the same time, the semiconductor process determines that the Schottky diode with low turn-on voltage has a large saturation current, that is, reverse leakage current, which reduces the rectification efficiency of the rectifier

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