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Analytical method for predicting NBTI long time recovery based on reaction-diffusion theory

A technology of diffusion theory and analytical method, applied in the analytical field of predicting NBTI long-term recovery, it can solve the problems of H2 falling into defects, unable to participate in recovery, and NBTI defects cannot be recovered, achieving the effect of wide applicability and few parameters

Active Publication Date: 2017-09-26
EAST CHINA NORMAL UNIVERSITY +1
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Problems solved by technology

In addition, since H 2 Lock-in effect, that is, a part of H during device degradation 2 Falling into defects and unable to participate in the recovery process, some NBTI defects cannot be recovered

Method used

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  • Analytical method for predicting NBTI long time recovery based on reaction-diffusion theory
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  • Analytical method for predicting NBTI long time recovery based on reaction-diffusion theory

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Embodiment Construction

[0038] The present invention will be further described in detail in conjunction with the following specific embodiments and accompanying drawings. The process, conditions, experimental methods, etc. for implementing the present invention, except for the content specifically mentioned below, are common knowledge and common knowledge in this field, and the present invention has no special limitation content.

[0039] The analysis method provided by the present invention introduces the innovative NBTI analysis model, based on the traditional RD theory, considering H 2 The diffusion coefficient decays with recovery time and lock-in effects to accurately calculate the long-term recovery of NBTI degradation. Analytic method of the present invention comprises the steps:

[0040] Step 1: Obtain device parameters of the p-MOSFET device. The device parameters of the p-MOSFET device include: threshold voltage degradation.

[0041] Step 2: Based on the basic RD theory, obtain a general...

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Abstract

The invention discloses an analytical method for predicting NBTI long time recovery based on a reaction-diffusion theory. The method includes the steps of 1, obtaining the device parameters of P-MOSFET devices; 2, based on the basic reaction-diffusion theory, obtaining a general analytical model for describing NBTI long time recovery; 3, based on the fast recovery of an interface trap and the locking effect of H2, modifying the general analytical model; 4, based on DH2 as a physical quantity which changes with time, introducing and modifying the expression that a parameter xi changes with time, and obtaining the whole analytical model for describing the NBTI long time recovery; 5, predicting of the NBTI long time recovery of the P-MOSFET devices based on the analytical model. The analytical model integrates the two H2 factors of attenuation with recovery time of the diffusion coefficient and the locking effect, and the validity of the analytical method for predicting NBTI long time recovery based on the reaction-diffusion theory is verified by being compared with the numerical solution of an R-D model.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to an analytical method for predicting long-term recovery of NBTI based on a reaction-diffusion (R-D) model. Background technique [0002] As the size of CMOS technology continues to shrink, negative bias temperature instability (NBTI) has become one of the main factors affecting the performance of p-MOSFET devices. NBTI effect leads to degradation of device parameters such as threshold voltage (ΔV T ), linear and saturated drain current, transconductance and subthreshold slope, etc., thereby degrading circuit and system performance. An analytical model that accurately describes and predicts NBTI degradation and recovery is an urgent problem in device reliability. In the past decades, the physical mechanism of NBTI has been intensively studied, and different explanations have been generated. The generation of interface traps described by R-D theory (ΔN IT ) is considered ...

Claims

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Application Information

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IPC IPC(8): G06F19/00
CPCG16Z99/00
Inventor 李小进曾严孙亚宾石艳玲胡少坚郭奥
Owner EAST CHINA NORMAL UNIVERSITY
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