Method and device for laser processing wafer

Abstract

The invention provides a laser machining method and device for a wafer. The method comprises changing relative positions between laser beams and a predetermined cutting path along a direction of the predetermined cutting path on the upper surface of the wafer to form a groove in the predetermined cutting path; and controlling an optical path modulator to realize periodic change of focus point positions of the laser beams on the upper surface of the wafer according to an emission frequency of a laser device, and forming customized focus point distribution combination along the direction of the predetermined cutting path. The focus point positions of the laser beams in the upper surface of the wafer are periodically changed by the optical path modulator to realize heating effect equalization of laser machining, the impact of severe energy on a Low-K material is reduced, a Low-K layer is prevented from being cracked and even peeled, and the uniformity of the laser machining process and reliability of the device thereof are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor processing, in particular to a method and device for laser processing wafers. Background technique [0002] In recent years, with the continuous reduction of the feature size of semiconductor devices and the continuous improvement of chip integration, the parasitic capacitance between metal interconnections and multilayer wiring and the resistance of metal wires have increased sharply, resulting in RC delays, A series of problems such as increased power consumption limit the development of high-speed electronic components. When the feature size of the device is smaller than 90nm, the wafer must use low dielectric constant material instead of traditional SiO 2 Layer (K ​​= 3.9 ~ 4.2), commonly used Low-K materials include Dow Corning's FOx and porous SiLK materials, Applied Materials' black diamond series low-K thin film materials, Novellus System's CORAL, Intel's CDO and NEC's FCN+ organic...

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Problems solved by technology

[0004] However, when the laser beam etches a groove on the predetermined cutting track, the cutting effect may be poor due to problems such as the thickness uniformity of the Low-K layer, and the impact of severe energy on the Low-K material will cause the Low-K layer to break causing problems such as peeling

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