LED epitaxial structure and preparation method thereof
An epitaxial structure, non-doping technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of unstable structure, many impurities, complex process, etc., achieve small size, large light-emitting area, and reduce dislocation density Effect
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[0036] This embodiment provides a method for preparing an LED epitaxial structure, such as figure 2 As shown, the structure includes a sapphire substrate, a nucleation layer formed on the (111) crystal plane of the substrate, a non-doped GaN layer, a SiN x layer, n-type GaN layer, InGaN / GaN multiple quantum well layer, p-type GaN layer.
[0037] As an embodiment of the present invention, the thickness of the non-doped GaN layer in this embodiment is 1 μm; SiN x The thickness of the layer is 10nm; the thickness of the n-type GaN layer is 3μm; the InGaN / GaN multi-quantum well layer has three well barrier periods; the thickness of the p-type GaN layer is 3μm; the decomposition temperature is 1000°C; the decomposition time is 20min. As an alternative embodiment of the present invention, the thickness of the non-doped GaN layer is 100nm~1μm, SiN x The thickness of the layer is 10nm~100nm, the thickness of the n-type GaN layer is 1μm~3μm, the InGaN / GaN multi-quantum well layer is...
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