Low Loss Semiconductor Power Devices
A technology for power devices and semiconductors, applied in semiconductor devices, electro-solid devices, transistors, etc., can solve the problems of easy gate oscillation and increased power device loss, and achieve large switching capacity, low switching loss, and fast switching speed. Effect
Active Publication Date: 2020-06-19
SUZHOU MEITIAN NETWORK TECH CO LTD
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Problems solved by technology
[0004] Existing power devices have extremely fast switching characteristics to achieve higher power conversion efficiency, but the gate is prone to oscillation when the power device is turned off and on. In order to suppress this oscillation, a power device is usually connected in series. Resistors to reduce oscillations, but this leads to increased losses in the entire power device
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[0024] The present invention will be further described in detail below in conjunction with the accompanying drawings, so that those skilled in the art can implement it with reference to the description.
[0025] It should be understood that terms such as "having", "comprising" and "comprising" used herein do not denote the presence or addition of one or more other elements or combinations thereof.
[0026] At the same time, in order to clearly illustrate the specific implementation of the present invention, the schematic diagrams listed in the accompanying drawings of the description magnify the thicknesses of the layers and regions described in the present invention, and the sizes of the listed figures do not represent actual sizes; the accompanying drawings of the description are schematic should not limit the scope of the present invention. The embodiments listed in the description should not be limited to the specific shapes of the regions shown in the drawings of the desc...
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A low loss semiconductor power device, comprising: a substrate (700) of a first conductive type, the bottom end thereof being provided with a drain electrode of an MOS transistor, the top of the substrate being provided with an epitaxial layer (200) of the first conductive type; channels (100) of a second conductive type, and body regions (300) of the second conductive type, the body regions covering the tops of at least two adjacent channels, forming adjacent body regions, in which source electrodes (310) of the first conductive type are provided, a gate electrode (500) being provided to lap the tops of the adjacent body regions; there are at least a first independent channel (110) and a second independent channel (120), which are not covered by the body regions, among the channels, an upper portion of the first independent channel being provided with a first PN junction, a first resistor (610) being provided in an insulated manner on the top of the epitaxial layer, the anode of the first PN junction being connected to the gate electrode, and the cathode of the first PN junction being connected with the source electrode via the first resistor. The technical problem of excessive loss during switching of a power device is solved.
Description
technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a low-loss semiconductor power device. Background technique [0002] Power devices include power ICs and power discrete devices. Power discrete devices mainly include semiconductor devices such as power MOSFETs, high-power transistors, and IGBTs. Power devices are used in almost all electronic manufacturing industries. The products used include notebooks and PCs in the computer field. , servers, monitors and various peripherals; mobile phones, telephones and other various terminals and local end devices in the field of network communications; traditional black and white home appliances and various digital products in the field of consumer electronics; industrial PCs in industrial control, various Instrumentation and various control equipment, etc. In addition to ensuring the normal operation of these devices, power devices can also play an effective role in energy saving....
Claims
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IPC IPC(8): H01L27/06
CPCH01L27/0635
Inventor 曹峰
Owner SUZHOU MEITIAN NETWORK TECH CO LTD