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Coating compositions for use with overcoated photoresists

A coating composition, photoresist technology, applied in anti-reflection coating, coating, photoengraving process coating equipment and other directions, can solve the problem of line width change and so on

Active Publication Date: 2020-07-07
ROHM & HAAS ELECTRONICS MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Radiation can also scatter from the substrate / photoresist interface into unintended exposed areas of the photoresist, again causing linewidth variations

Method used

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  • Coating compositions for use with overcoated photoresists
  • Coating compositions for use with overcoated photoresists
  • Coating compositions for use with overcoated photoresists

Examples

Experimental program
Comparison scheme
Effect test

example 1-5

[0187] Examples 1-5: Polymer Synthesis

example 1

[0188] Example 1: Synthesis of Polymer 1 (THEIC-TCEIC-DBNDC)

[0189] 39.8g tris(2-hydroxyethyl)isocyanurate, 17.5g tris(2-carboxyethyl)isocyanurate, 0.73g p-toluenesulfonic acid monohydrate, 32.1g dibutyl naphthalene dicarboxylate The ester, 67 g of anisole and 100 g of 1-butanol were charged in a 250 mL round bottom flask. The mixture was then heated to 140-160°C and the contents stirred vigorously. Butanol was distilled slowly from the reaction flask along with anisole. Polymers with different Mw were synthesized by controlling the amount of distillate. The polymer solution was then diluted by adding THF 100 g. The mixture was precipitated from MTBE / IPA (50 / 50). The above polymer was collected and dried under vacuum overnight at 40-60°C. The GPC weight average molecular weight Mw is 3000, and the polydispersity is 1.30.

example 2

[0190] Example 2: Synthesis of Polymer 2 (THEIC-TCEIC-DBNDC-DD)

[0191] 37.8g tris (2-hydroxyethyl) isocyanurate, 16.6 tris (2-carboxyethyl) isocyanurate, 0.71g p-toluenesulfonic acid monohydrate, 30.5g dibutyl naphthalene dicarboxylate Esters, 14.9 g 1,10-decanediol, 80 g anisole, and 100 g 1-butanol were added to a 250 mL round bottom flask. The mixture was then heated to 140-160°C and the contents stirred vigorously. Butanol was distilled slowly from the reaction flask along with anisole. Polymers with different Mw were synthesized by controlling the amount of distillate. The polymer solution was then diluted by adding THF 100 g. The mixture precipitated from IPA. The above polymer was collected and dried under vacuum overnight at 40-60°C. The GPC weight average Mw was 6570 and the polydispersity was 1.60.

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Abstract

The present invention provides organic coating compositions, particularly antireflective coating compositions for use with overcoated photoresists, comprising a blend of two or more resins, one of which has side-mounted Or epoxy groups fused to the polymer backbone. A preferred coating composition comprises: 1) a first resin comprising one or more epoxy reactive groups; and 2) a crosslinker resin different from the first resin and comprising epoxy groups.

Description

Background technique [0001] The present invention relates to compositions, and in particular antireflective coating compositions for microelectronic applications. The compositions of the present invention comprise a blend of two or more resins, one of which has epoxy groups pendant or fused to the polymeric backbone polymeric crosslinker component. Preferred compositions of the present invention are used with overcoated photoresist compositions and may be referred to as bottom antireflective compositions or "BARCs." [0002] Photoresist is a light sensitive film used to transfer an image onto a substrate. A coating of photoresist is formed on the substrate, and the photoresist layer is then exposed to a source of activating radiation through a photomask. After exposure, the photoresist is developed to provide a relief image that allows selective processing of the substrate. [0003] Reflection of the activating radiation used to expose the photoresist typically places a lim...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09D167/02C09D125/18C09D133/10C09D133/14C09D161/10C09D5/00G03F7/16G03F7/09
CPCC09D5/006C09D125/18C09D133/10C09D133/14C09D161/06C09D167/02G03F7/09G03F7/16C08L2205/02C08L33/14C08L33/10C08L61/06C08L33/08C08F220/14G03F7/091C08G63/6856C08G63/183C08G63/189C08G63/6826C08F220/20C08F216/165C08L33/068C09D163/00G03F7/032G03F7/033G03F7/0385C08L63/00C08L67/00G03F7/11C08G73/0638
Inventor 沈载桓李惠元E·曹赵廷奎朴琎洪柳义炫林载峰
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC