A kind of semiconductor laser and manufacturing method and equipment

Abstract

The invention discloses a semiconductor laser, a manufacturing method and equipment. The semiconductor laser comprises: a substrate; an N-surface waveguide layer arranged on one side of the substrate; an N-surface electrode arranged on one side of the substrate and away from the N-surface waveguide layer ; The light-emitting area arranged on the side of the N-plane waveguide layer and away from the substrate; the P-plane waveguide layer arranged on the side of the light-emitting area and away from the N-plane waveguide layer; Covering layer; the P-face electrode arranged on one side of the P-face covering layer and away from the P-face waveguide layer; the current blocking layer arranged on the P-face covering layer and embedded in the P-face electrode; wherein, the current blocking layer connects the P-face The electrode is divided into a plurality of current injection regions, and the size of the current injection region gradually decreases from the middle to both ends of the P-face electrode. The semiconductor laser is characterized by high output power and high beam quality.

Description

technical field [0001] The present invention relates to the field of optoelectronic technology, and more specifically, to a semiconductor laser, a manufacturing method and equipment. Background technique [0002] Semiconductor lasers (Laser Diode, referred to as: LD) have extremely small chip size, high electro-optical conversion efficiency and output power, and are widely used in solid-state laser pumping, laser processing, laser medical treatment and laser radar and other fields. [0003] For fields such as solid-state laser pumping and laser processing, semiconductor laser modules are required to have a power of tens of thousands of watts or even 10,000 watts. It is required that the semiconductor laser unit has high beam quality to improve the coupling efficiency, and in order to reduce the cost of the semiconductor laser, it is necessary to ensure that each semiconductor laser unit has high output power. For fields such as lidar, semiconductor lasers are also required ...

AI Technical Summary

Problems solved by technology

[0004] In the prior art, the structure of the light-emitting region of the semiconductor laser is a strip structure with a width of tens of μm or even hundreds of μm, which leads to the common lasing of the fundamental mode and the high-order mode of the laser in the width direction of the semiconductor laser.

When the basic mode of the semiconductor laser has a Gaussian light field distribution, it is the most ideal light-emitting mode; when there is a high-order mode lasing in the output laser or when the high-order mode lasing is higher than the fundamental mode lasing, There will be a problem of uneven light spot, which will greatly reduce the quality of the laser beam

[0005] In the prior art, the filtering of high-order modes is achieved by reducing the width of the light-emitting region, but this technical means reduces the output power of the semiconductor laser to a certain extent.

Images