Epitaxy equipment

Abstract

The invention provides epitaxy equipment. The epitaxy equipment comprises a reaction cavity, a cover plate arranged in the upper part of the reaction cavity, and a tray arranged in the lower part of the reaction cavity. Through a cooling water inlet and a cooling water outlet, cooling water is introduced into the cavity and is used to reduce the temperature of whole reaction cavity during the growth process of an epitaxial layer so that the long term high temperature on each part of the epitaxy equipment is avoided, an epitaxial layer with a large thickness can be obtained at a time, the performance of the epitaxy equipment is not influenced, and the yield is not affected. A radio-frequency heating coil is used to replace a heating tube in the prior art, the radio-frequency heating coil is hollow, and cooling water is introduced into the radio-frequency heating coil so as to prevent excess temperature of the radio-frequency heating coil. A part of the cover plate in the cavity is made of a transparent material so as to form an observation window in the cover plate. An infrared temperature measuring device is used to replace a conventional thermal resistance temperature measuring device. The probe of the infrared temperature measuring device can be freely moved on the observation window so that the temperature distribution of a whole wafer can be measured.

Description

technical field [0001] The invention relates to semiconductor manufacturing equipment, in particular to an epitaxial equipment. Background technique [0002] At present, none of the epitaxial equipment can complete relatively thick epitaxial products at one time, which is limited by many aspects, for example: the heating lamp cannot withstand high temperature for a long time; the quartz cavity and metal of the epitaxial furnace itself cannot withstand long time High temperature; during the growth of a thicker epitaxial layer, the quartz chamber laminates are more serious, and the laminates are not easy to etch, and long-term etching will greatly shorten the service life of the quartz chamber. [0003] In the prior art, if you want to use the epitaxial equipment ASM E3200 or AMAT 300 to produce thicker epitaxial layers, two methods are usually adopted: (1) sacrifice the epitaxial equipment maintenance (PM) cycle and the life of the device (parts) directly One-time completion...

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Problems solved by technology

[0002] At present, none of the epitaxial equipment can complete relatively thick epitaxial products at one time, which is limited by many aspects, for example: the heating lamp cannot withstand high temperature for a long time; the quartz cavity and metal of the epitaxial furnace itself cannot withstand long time High temperature; during the growth of thicker epitaxial layers, the quartz cavity layer is more serious, the layered material is not easy to etch, and the long-term etching will greatly shorten the service life of the quartz cavity

[0003] In the prior art, if you want to use the epitaxial equipment ASM E3200 or AMAT 300 to produce thicker epitaxial layers, two methods are usually adopted: (1) sacrifice the epitaxial equipment maintenance (PM) cycle and the life of the device (parts) directly Completed at one time; (2) Adopt the method of epitaxy in batches to produce, but repeatedly entering and exiting the epitaxy equipment will affect the production capacity of the machine

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