Fabrication method of vertical double-diffused metal-oxide-semiconductor (VDMOS) device
A device and gate oxide technology, applied in the field of VDMOS device fabrication, can solve the problems of increasing VDMOS device fabrication cost and complex fabrication process, etc.
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[0045] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0046] figure 1 It is a flow chart of Embodiment 1 of the manufacturing method of the VDMOS device of the present invention, such as figure 1 As shown, the manufacturing method of the VDMOS device provided in this embodiment includes the following steps.
[0047] Step 101 , growing a gate oxide layer 3 on the N-type epitaxial layer 2 and ...
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