Novel U-shaped groove IGBT (Insulated Gate Bipolar Transistor) and manufacturing method thereof
A manufacturing method and U-shaped groove technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as reducing breakdown voltage, and achieve the effect of improving conduction current density and breakdown voltage
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Embodiment 1
[0040] figure 1 Schematic diagram of the structure of the novel U-groove IGBT provided in Embodiment 1 of the present invention; figure 1 As shown, this embodiment provides a novel U-shaped slot IGBT, including:
[0041] The semiconductor substrate 1 and the cellular region 2; the cellular region 2 includes a first base region 21 located in the semiconductor substrate 1, a second base region 22, a first source region 23 located in the first base region 21, and a first source region located in the second base region 21. The second source region 24 in the second base region 22 and the U-shaped groove 25 between the first base region 21 and the second base region 22, the bottom of the U-shaped groove 25 is located in the semiconductor substrate 1, and the inner surface of the U-shaped groove 25 Covered with an oxide layer 251, and the coverage of the oxide layer 251 extends from the inner surface of the U-shaped groove 25 to part of the first source region 23 and part of the sec...
Embodiment 2
[0046] This embodiment is a supplementary description based on the above embodiments.
[0047] figure 2 Schematic diagram of the structure of the novel U-groove IGBT provided for Embodiment 2 of the present invention; figure 2 As shown, the cell region also includes a passivation layer 26 and a first metal layer 27, wherein the passivation layer 26 covers the polysilicon layer 252, part of the first source region 23 and part of the second source region 24, and the first metal layer 27 covers Passivation layer 26 , part of first source region 23 , part of second source region 24 , part of first base region 21 and part of second base region 22 .
[0048] Specifically, the passivation layer 26 is used to separate the first metal layer 27 from the oxide layer 251 and the polysilicon layer 252 (the gate oxide layer 251 and the polysilicon electrode), and the first metal layer 27 is preferably an aluminum layer.
[0049] Further, the above-mentioned IGBT also includes an emissio...
Embodiment 3
[0060] The manufacturing method of the new U-shaped groove IGBT provided in this embodiment can be used to manufacture the new U-shaped groove IGBT in the first embodiment above.
[0061] Figure 4 A schematic flow diagram of a novel U-groove IGBT manufacturing method provided in Embodiment 3 of the present invention; as Figure 4 As shown, this embodiment provides a novel U-groove IGBT manufacturing method, including:
[0062] Step 101, forming a first base region and a second base region in a surface of a semiconductor substrate.
[0063] The structure formed in this step is as Figure 5 As shown, reference numeral 400 is a semiconductor substrate, 401 is a first base region, and 402 is a second base region.
[0064] Step 102, etching a U-shaped groove between the first base region and the second base region in the surface of the semiconductor substrate, wherein the bottom of the U-shaped groove is located in the semiconductor substrate.
[0065] Specifically, plasma dry...
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