Unlock instant, AI-driven research and patent intelligence for your innovation.

ldmos device and its manufacturing method

A manufacturing method and device technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as device breakdown voltage reduction, achieve the effect of small on-resistance and increase manufacturing cost

Active Publication Date: 2017-10-24
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But this method will cause the breakdown voltage of the device to decrease

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • ldmos device and its manufacturing method
  • ldmos device and its manufacturing method
  • ldmos device and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] see figure 1 , which is an embodiment of the LDMOS device of the present application, taking an n-type LDMOS device as an example. There is an n-type buried layer 102 on the p-type substrate 101 , and there is a first n-well 103 thereon, and the bottom of the first n-well 103 is in contact with the n-type buried layer 102 . An isolation structure 104 , a second n well 105 , a p well 106 and a first p-type doped region 107 are provided in the first n well 103 . The second n-well 105 is located between the third isolation structure 104 c and the fourth isolation structure 104 d, and the depth of the second n-well 105 is substantially the same as that of the isolation structure 104 . The P well 106 is under part of the first isolation structure 104a, between the first isolation structure 104a and the second isolation structure 104b, and under the entire second isolation structure 104b, and part of the second isolation structure 104b and the second isolation structure 104...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present application discloses an LDMOS device, which includes a first n well as a drift region of the device; a p well and a second n well in the first n well, and the p well serves as the region where the channel of the device is located; An n well has a gate oxide layer and a gate; in the p well, there is an n-type doped region as the source of the device; at the bottom of the p well, there is a first p-type doped region, and the first p-type doped region is region also extends to just below the gate oxide; there is a third p-type doped region in the second n-well as the drain of the device. Alternatively, the doping types of the above-mentioned parts are reversed. The application also discloses a manufacturing method of the LDMOS device. The LDMOS device of the present application has a small on-resistance, and at the same time, the breakdown voltage will not be lowered substantially. Its manufacturing method only adopts CMOS process, so it can be integrated in BCD process without increasing the manufacturing cost.

Description

technical field [0001] The present application relates to a semiconductor integrated circuit device, in particular to an LDMOS device. Background technique [0002] DMOS devices are currently widely used in power management circuits due to their characteristics of high voltage resistance, high current drive capability, and extremely low power consumption. DMOS devices are mainly divided into two types: VDMOS (Vertical Diffusion MOS Transistor) devices and LDMOS (Lateral Diffusion MOS Transistor) devices. [0003] The BCD process refers to the process that can produce bipolar transistors (Bipolar), CMOS devices and DMOS devices on the same chip. When using the BCD process to manufacture DMOS devices, due to the sharing of process conditions with CMOS devices, the manufactured DMOS devices have high on-resistance, which often cannot meet the requirements of power switch tube applications. [0004] In order to reduce the on-resistance of DMOS devices manufactured by the BCD p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/08H01L21/336
CPCH01L29/0856H01L29/0873H01L29/66681H01L29/7816H01L29/66689H01L29/1095H01L29/1083H01L29/0878H01L29/0653
Inventor 钱文生石晶刘冬华段文婷胡君
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP