Multi-channel silicon-based switching filter bank and manufacturing method thereof
A technology of switching filter bank and manufacturing method, which is applied to waveguide type devices, electrical components, circuits, etc., can solve the problems of low energy consumption, high energy consumption, small size of switching filter bank, etc., so as to improve performance and reduce Volume, the effect of reducing energy consumption
Active Publication Date: 2017-11-17
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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[0004] The technical problem to be solved by the present invention is to provide a multi-channel silicon-based switching filter bank and its manufacturing method to solve the problems of large volume and high energy consumption of the traditional switching filter bank. Features of small size and low energy consumption
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[0027] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments, but the protection scope of the present invention is not limited to the following description.
[0028] Such as figure 1 and figure 2 As shown, they are respectively the working principle block diagram and cross-sectional view of the multi-channel silicon-based switching filter bank of the present invention. The multi-channel silicon-based switching filter bank includes a silicon-based carrier layer 1, a silicon-based lead protection layer 2, and a silicon-based outer frame layer 3 , a silicon-based cover layer 4 and a switch chip 6; a silicon-based carrier layer 1, a silicon-based lead protection layer 2, a silicon-based outer frame layer 3 and a silicon-based cover layer 4 are sequentially stacked and connected from bottom to top, and the silicon-based carrier layer 1. Silicon-based lead protection layer 2, silicon-based outer frame...
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Abstract
The invention discloses a multi-channel silicon-based switching filter bank and a manufacturing method thereof, and relates to the technical field of semiconductors and microelectronic devices. The multi-channel silicon-based switching filter bank comprises a silicon-based carrier layer, a silicon-based lead protection layer, a silicon-based frame layer, a silicon-based cover plate layer and a switching chip. The switching filter bank is manufactured by adopting a silicon-based MEMS process. The switching chip is pre-buried in the silicon-based carrier layer. An interdigital filter with a silicon-based MEMS structure is adopted. The silicon-based substrate has a high dielectric constant, so that a small-size filter can be manufactured on the silicon-based substrate. Meanwhile, a strip line structure is adopted. The filter processed by applying the MEMS process further reduces the size of the filter bank. The micron-order processing error can be realized with the help of a high-precision semiconductor processing technology, so that the performance of the filter group is improved. The filter bank adopts the switching chip, and the power consumption of the filter bank is reduced.
Description
technical field [0001] The invention relates to the technical field of semiconductors and microelectronic devices, in particular to a multi-channel silicon-based switching filter bank and a manufacturing method thereof. Background technique [0002] With the development of broadband communication technology, frequency selective networks are widely used in frequency synthesizers, transmitters, receivers and other systems. The frequency selection network requires the frequency selection signal spectrum to have the performance of high purity, fast tracking of frequency changes, and wide bandwidth. The switch filter bank is composed of multiple switch filters, which can be switched to the required band through the switch bank, which can meet the requirements of broadband communication. As an important microwave device in the frequency selection network, it occupies a very important position in the whole system. In order to ensure the signal-to-noise ratio of the overall system...
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Login to View More IPC IPC(8): H01P1/20H01P11/00
CPCH01P1/20H01P11/00H01P11/007
Inventor 刘秀博王绍东王志强
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP