Corn cultivating method by using mulching films
A cultivation method and mulching technology, applied in cultivation, plant cultivation, botany equipment and methods, etc., can solve the problems of reducing yield, affecting the growth and development of offspring, unfavorable environmental protection, etc., and achieve the effect of inhibiting the growth of weeds
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1
[0049] (1) When the spring planting season comes, do not irrigate the land and keep the soil dry; before sowing, plow and rake the land to make the soil deep and finely crushed, and the soil should be finely moistened, and the residual crops and stones should be completely removed ;
[0050](2) Ditch and complete the furrow, so that the furrow is straight and flat, and the width of the furrow is 80 cm; the sowing ditch is opened along the extension direction of the furrow at 10 cm near the two sides of the furrow, and the distance between the sowing ditch and the edge of the furrow is 10 cm , apply 40 kg of nitrogen-phosphorus compound fertilizer per acre in the sowing ditch, and sow at equal intervals in the sowing ditch, with 2-3 seeds in each hole, and the depth is 3 cm;
[0051] (3) After sowing, cover the furrow with a low-pressure high-density polyethylene colorless transparent film with a width of 100 cm and a thickness of 0.005 mm. Cover with the seeds. When covering t...
Embodiment 2
[0054] (1) When the spring planting season comes, do not irrigate the land and keep the soil dry; before sowing, plow and rake the land to make the soil deep and finely crushed, and the soil should be finely moistened, and the residual crops and stones should be completely removed ;
[0055] (2) Ditch and complete the furrow, so that the furrow is straight and flat, and the width of the furrow is 100 cm; the sowing ditch is opened along the extension direction of the furrow at 10 cm near the two sides of the furrow, and the distance between the sowing ditch and the edge of the furrow is 15 cm , apply 50 kg of nitrogen-phosphorus compound fertilizer per acre in the sowing ditch, and sow at equal intervals in the sowing ditch, with 2-3 seeds in each hole, and the depth is 5 cm;
[0056] (3) After sowing, cover the furrow with a low-pressure high-density polyethylene colorless transparent film with a width of 110 cm and a thickness of 0.005 mm. Cover with the seeds. When covering...
Embodiment 3
[0059] (1) When the spring planting season comes, do not irrigate the land and keep the soil dry; before sowing, plow and rake the land to make the soil deep and finely crushed, and the soil should be finely leveled, and the residual crops and stones should be completely removed ;
[0060] (2) Ditch and complete the furrow, so that the furrow is straight and flat, and the width of the furrow is 100 cm; the sowing ditch is opened along the extension direction of the furrow at 10 cm near the two sides of the furrow, and the distance between the sowing ditch and the edge of the furrow is 15 cm , apply 50 kg of nitrogen-phosphorus compound fertilizer per acre in the sowing ditch, and sow at equal intervals in the sowing ditch, with 3 seeds in each hole, and the depth is 5 cm;
[0061] (3) After sowing, cover the furrow with a low-pressure high-density polyethylene colorless transparent film with a width of 90 cm and a thickness of 0.006 mm. Cover with the seeds. When covering the ...
PUM
Property | Measurement | Unit |
---|---|---|
Thickness | aaaaa | aaaaa |
Width | aaaaa | aaaaa |
Thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com