Method of performing plating process on transparent conductive film for solar cells

Abstract

A method of performing electroplating process on transparent conductive film for solar cells according to the present disclosure includes: forming a barrier layer on a transparent conductive film; forming a first mask on the barrier layer, wherein the first mask covers a part of the barrier layer; etching the barrier layer such that the covered part of the barrier layer covered by the first mask keeps remaining on the transparent conductive film and the uncovered part of the barrier layer is removed; removing the first mask to expose the remaining barrier layer; forming a second mask on the transparent conductive film, wherein the second mask has an opening to expose at least one portion of the remaining barrier layer; plating a copper layer on the exposed barrier layer in the opening; plating a capping layer on the copper layer; and removing the second mask after the capping layer is formed.

Description

technical field [0001] The present invention relates to the field of solar cells, in particular, to a method for implementing an electroplating process, and more particularly to a method for implementing an electroplating process on a transparent conductive film, which can be used to form electrodes of solar cells. The feature of this technology is that it utilizes two-stage shielding and electroplating process, which can precisely control and define the pattern of the metal electrode structure. This method can effectively avoid the so-called "undercut" (undercut) caused by the lateral etching of the etchant during the production process. ) phenomenon, so that the barrier layer cannot be etched out the desired pattern accurately, therefore, the final metal electrode structure will not be corroded by the etchant. Background technique [0002] Under the circumstances of the shortage of petrochemical energy and the increasing demand for energy, the development of renewable ener...

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Problems solved by technology

[0007] However, the above-mentioned etchant used for etching the nickel layer or titanium layer in order to form the barrier layer 171 will also contact the already formed copper layer 172 and protective layer 173 to cause corrosion, and the nickel layer or titanium layer is located on the copper layer 172 The part directly below will also produce the so-called "undercut" phenomenon due to the lateral etching of the etchant, so that the barrier layer 171 cannot accurately form the desired pattern.

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