Semiconductor Devices And Methods For Testing Gate Insulation Of Transistor Structure

Abstract

The present invention discloses semiconductor devices and methods for testing the gate insulation of a transistor structure. A semiconductor device includes a first test structure including a first portion of a conductive structure and a second portion of the conductive structure located within a first lateral wiring layer of a layer stack of the semiconductor device. The first portion of the conductive structure of the first test structure is electrically connected to the second portion of the conductive structure of the first test structure through a third portion located within a second lateral wiring layer of the layer stack arranged above the first lateral wiring layer. Further, the first portion of the conductive structure of the first test structure is electrically connected to a gate of a test transistor structure, a doping region of the test transistor structure or an electrode of a test capacitor. Additionally, the first portion of the conductive structure of the first test structure is electrically connected to a first test pad of the first test structure.

Description

technical field [0001] Embodiments relate to testing concepts for gate insulation of transistors, and in particular to semiconductor devices and methods for testing gate insulation of transistor structures. Background technique [0002] Many wafer production processes are based on plasma effects. Use charged particles. Examples are etching processes for contacts and vias, processes for structuring aluminum metal lines, and plasma enhanced chemical vapor deposition PECVD processes for depositing intermetal dielectrics. Such plasma processes can charge the metal lines during wafer processing. If such lines are connected to the gates of transistors in a product, this charging can cause tunneling currents through the gate oxide to damage or destroy the oxide. This damage can be in the form of neutral oxide defects that form trap states in the oxide, which can be recharged by product operation during the product lifetime. With too many trapped states being charged, the transi...

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Problems solved by technology

With too many trapped states being charged, the transistor parameters can drift so far that the product may fail during its lifetime

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