MSMV (Multi-supply Multi-voltage) integrated circuit ESD protection network under epitaxial technology

Abstract

A MSMV (Multi-supply Multi-voltage) integrated circuit ESD protection network under an epitaxial technology comprises a power supply VIO, an earth VSSIO, a power supply VCORE, an earth VSSCORE, a diode DD1, a diode DD2, a diode DD3, a first VIOSCR protection circuit, a second VIOSCR protection circuit, a third VIOSCR protection circuit, a VCORESCR protection circuit and an IO PAD; the first VIOSCR protection circuit is arranged between the power supply VIO and the earth VSSIO; the VCORESCR protection circuit is arranged between the power supply VCORE and the earth VSSCORE; the second VIOSCR protection circuit and the third VIOSCR protection circuit are respectively arranged between the IO PAD and the power supply VIO and between the IO PAD and the earth VSSIO for protections. The normal ESD design (GGNMOS) under the epitaxial technology has a protection failure problem, and a MSMV (Multi-supply Multi-voltage) integrated circuit ESD is hard and complex to design; the MSMV (Multi-supply Multi-voltage) integrated circuit ESD protection network under the epitaxial technology can solve said problems, thus effectively realizing MSMV (Multi-supply Multi-voltage) integrated circuit ESD protections; the protection network uses a limited layout area, provides a strong ESD robustness, and can improve the ESD protection efficiency.

Description

technical field [0001] The invention relates to an ESD protection network for an integrated circuit with multiple power supply voltages under an epitaxial process, belonging to the field of integrated circuit design. Background technique [0002] Improving the high performance and low power consumption of integrated circuits is the goal pursued by the integrated circuit industry, but electrostatic discharge is a serious reliability problem faced by the integrated circuit field. Therefore, it is urgent to avoid the risk of ESD failure and improve ESD efficiency. The epitaxial process is widely used because it can significantly improve the performance of integrated circuits, but the epitaxial process will cause the conventional ESD protection structure (GGNMOS) of integrated circuits to be at risk of failure, which is a new challenge for ESD design. At the same time, in order to improve circuit performance and reduce power consumption, the internal circuit of the integrated ci...

AI Technical Summary

Problems solved by technology

[0003] The technical problem of the present invention is: to overcome the deficiencies of the prior art, to provide a multi-supply voltage integrated circuit ESD protection network under the epitaxial process, which can solve the protection failure problem of the conventional ES...

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