An anti-static protection circuit for a radio frequency chip high power amplifier

Abstract

The invention provides an antistatic protection circuit of a radio frequency chip high power amplifier, comprising a PA core circuit, a PA output matching circuit, an ESD protection circuit and a power switch circuit, the power switch circuit is connected to the PA output matching circuit; the ESD protection circuit includes a diode D1 , diode D2, MOS transistor N3 and MOS transistor N4, the anode of diode D1 is grounded, the cathode of diode D1 is forward connected to the drain of MOS transistor N3 through diode D2, the source of MOS transistor N3 is connected to the drain of MOS transistor N4, and the MOS The source of the tube N4 is grounded, the gate of the MOS tube N3 is connected to the power supply VDD, the cathode of the diode D2 is connected to the power supply VDD through the diode D3~diode D9 in turn, and the gate of the MOS tube N4 is connected to the power switch circuit The cathode of the diode D1 is connected to PA In the core circuit, the cathode of diode D1 is connected to the PA output matching circuit through PAD1. The antistatic protection circuit of the high power amplifier of the radio frequency chip has the advantages of scientific design, strong practicability, simple structure, high ESD performance and low cost.

Description

technical field [0001] The invention relates to a circuit, in particular to an antistatic protection circuit of a radio frequency chip high-power amplifier. Background technique [0002] The ESD bottleneck of current radio frequency integrated circuits is limited to several radio frequency pins (for example: low noise amplifier (LNA) input pin of radio frequency, power amplifier (PA) output pin of radio frequency). It is difficult for the ESD of these pins to exceed 4KV, generally about 2KV, and these two pins are more likely to be damaged by electrostatic attacks because they are connected to the antenna. [0003] The ESD protection circuit of the power amplifier (PA) of the existing radio frequency chip generally protects the power amplifier (PA) from being damaged by static electricity by stacking a plurality of diodes according to the required output power. When this method needs to output high power, many diodes need to be superimposed. For example, the transmission po...

AI Technical Summary

Problems solved by technology

When this method needs to output high power, many diodes need to be superimposed. For example, the transmission power of 20dbm requires about 8 diodes to be superimposed, and it is difficult to make the ESD performance reach 4KV.

Now if high ESD performance is required, many methods are to add ESD protection circuit on the printed circuit board (PCB) outside the chip, which increases the cost and loses the efficiency of PA, that is, the same power requires more current

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