Photoresist composition and photoresist

A composition and photoresist technology, applied in optics, nonlinear optics, instruments, etc., can solve the problems of inconsistent reaction degree, high mobility, photoresist peeling, etc., and achieve the effect of reducing the risk of peeling problems

Inactive Publication Date: 2017-12-22
SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a small molecular substance, the initiator has the problem of high mobility in the curing system; in addition, when the film thickness of the RGB negative photoresist reaches a certain thickness, the reaction degree between the bottom layer and the surface layer is inconsistent during the photocuring reaction process, and it is easy to Problems such as photoresist peeling

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photoresist composition and photoresist
  • Photoresist composition and photoresist
  • Photoresist composition and photoresist

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0083] The photoresist composition in this embodiment includes: 8% by mass of resin matrix, 8% by mass of pigment / dye, 4% by mass of reactive diluent monomer, and 80% by mass of solvent.

[0084] The resin matrix contains four components: unsaturated polyester, epoxy acrylic resin, polyurethane acrylic resin, and self-initiating resin, wherein the mass percentage of self-initiating resin is 2%, and the mass percentage of self-initiating resin is relatively high here, so A photoinitiator may not be added to the photoresist composition.

[0085] The structure of A is as follows:

[0086]

[0087] The structure of B is as follows:

[0088]

[0089] The reaction mechanism between structure A and structure B is as follows:

[0090]

[0091] The chemical structural formula of the self-initiating resin obtained is as follows:

[0092]

[0093] The mechanism by which self-initiating resins initiate photopolymerization is as follows:

[0094]

[0095] Of course, self...

Embodiment 2

[0100] The photoresist composition in this embodiment includes: a resin matrix with a mass percentage of 10%, a pigment / dye with a mass percentage of 6.6%, a reactive diluent monomer with a mass percentage of 3%, a solvent with a mass percentage of 80%, A photoinitiator with a mass percentage of 0.2%, and an additive with a mass percentage of 0.2%.

[0101] The resin matrix contains four components: unsaturated polyester, polyether acrylic resin, pure acrylic resin and self-initiating resin, wherein the mass percentage of self-initiating resin is 1.5%.

Embodiment 3

[0103] The photoresist composition in this embodiment includes: a resin matrix with a mass percentage of 9%, a pigment / dye with a mass percentage of 7%, a reactive diluent monomer with a mass percentage of 3.8%, a solvent with a mass percentage of 80%, The mass percentage is 0.1% photoinitiator, and the mass percentage is 0.1% additive.

[0104] The resin matrix contains four components: unsaturated polyester, polyether acrylic resin, pure acrylic resin and self-initiating resin, wherein the mass percentage of self-initiating resin is 1.8%.

[0105] In summary, in the resin matrix of the photoresist composition provided by the present invention, the self-initiating resin can initiate photopolymerization and curing reaction like a photoinitiator, and the self-initiating resin is fully mixed with the acrylic resin in the resin matrix , so that the pigments and dyes in the photoresist composition can also be initially dispersed, and can also promote the dispersion of other compon...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a photoresist composition and photoresist. The photoresist composition is prepared from, by mass, 4-10% of a resin matrix, 5-8% of pigment/dye, 0-5% of reactive diluent monomer and 70-80% of solvent, the resin matrix contains acrylic resin and self-initiated resin, and the self-initiated resin is 0-2% by mass. According to the photoresist composition and the photoresist, in a curing system, the mobility is small, and the deep curability is good; the surface layer and the bottom layer of the photoresist composition can both perform sufficient curing reactions, and the risk of peeling off of the cured photoresist composition is reduced.

Description

technical field [0001] The invention relates to the technical field of liquid crystal display panels, in particular to a photoresist composition and photoresist. Background technique [0002] Liquid crystal displays (LCDs) are the most widely used real-world products in the market today. As the core device of liquid crystal display, TFT-LCD mainly includes three components: CF (color filter, color filter) substrate, liquid crystal, and TFT (Thin Film Transistor, thin film transistor) substrate. RGB (ie, red, green, blue) three-color pixel points on the CF substrate respectively correspond to three sub-pixels on the TFT substrate, and the three sub-pixels are combined into one pixel. The color display of the liquid crystal display is mainly realized by RGB three-color pixels on the CF substrate. The RGB three-color pixel dots form the pattern structure required by the design through the photoresist film formation of three different systems of RGB to complete the assisting c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C08F283/01C08F283/10C08F283/00C08F2/48C08F291/06G02F1/1335
CPCC08F2/48C08F265/00C08F283/008C08F283/01C08F283/065C08F283/105G02F1/133514
Inventor 李颖
Owner SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap