Seed crystal laying method, casting method of monocrystal silicon-like ingot and monocrystal silicon-like wafer
A laying method and a technology similar to single crystal silicon, which can be applied in the directions of single crystal growth, single crystal growth, chemical instruments and methods, etc., and can solve the problem of low reuse efficiency of seed crystals.
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Embodiment 1
[0059] A method for laying a seed crystal for casting a quasi-single crystal, the method comprising:
[0060] (1) cutting the seed crystal with a length × width × height of 156 × 156 × 15 mm into three layers of sub-seeds, wherein the length × width × height of the cut sub-seeds is 156 × 156 × 5 mm;
[0061] (2) Provide a crucible with an internal size of 1000×1000×480mm. The length×width×height obtained in step (1) is a total of 108 sub-seed crystals of 156×156×5mm. After splicing and laying a layer of sub-seeds in the arrangement of 6, sub-seeds in a 6×6 arrangement are further laid on the upper part of the sub-seeds in multiple layers, finally forming a three-layer 6×6 arrangement. The seed crystal layer formed by laying the sub-seed crystals, wherein each outer edge of the seed crystal layer maintains the same gap with the side wall of the crucible;
[0062] (3) After the quasi-single-crystal silicon ingot is produced by using the seed crystal layer, the sub-seed crystals...
Embodiment 2
[0065] A method for laying a seed crystal for casting a quasi-single crystal, the method comprising:
[0066] (1) cutting the seed crystal with a length × width × height of 156 × 156 × 15 mm into three layers of sub-seeds, wherein the length × width × height of the cut sub-seeds is 156 × 156 × 5 mm;
[0067] (2) Provide a crucible with an internal size of 840×840×460mm. The length×width×height obtained in step (1) is a total of 75 sub-seed crystals of 156×156×5mm. After splicing and laying a layer of sub-seeds in the arrangement of 5, sub-seeds in the arrangement of 5×5 are further laid on the upper part of the sub-seeds in multiple layers, finally forming a three-layer 5×5 arrangement. The seed crystal layer formed by laying the sub-seed crystals, wherein each outer edge of the seed crystal layer maintains the same gap with the side wall of the crucible;
[0068] (3) After the quasi-single-crystal silicon ingot is produced by using the seed layer, the sub-seed crystals that ...
Embodiment 3
[0070] A method for laying a seed crystal for casting a quasi-single crystal, the method comprising:
[0071] (1) cutting the seed crystal with a length × width × height of 156 × 156 × 16 mm into 4 layers of sub-seeds, wherein the length × width × height of the cut sub-seeds is 156 × 156 × 4 mm;
[0072] (2) Provide a crucible with an internal size of 1000×1000×480mm. The length×width×height obtained in step (1) is a total of 144 sub-seed crystals of 156×156×4mm. After splicing and laying a layer of sub-seeds in the arrangement of 6, sub-seeds in a 6×6 arrangement are further laid on the upper part of the sub-seeds in multiple layers, and finally form a four-layer 6×6 arrangement. The seed crystal layer formed by laying the sub-seed crystals, wherein each outer edge of the seed crystal layer maintains the same gap with the side wall of the crucible;
[0073] (3) After the quasi-single-crystal silicon ingot is produced by using the seed crystal layer, the sub-seed crystals tha...
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