A gan power amplifier tube bias protection circuit

Abstract

A GaN power amplifying tube bias protection circuit comprises a GaN power amplifying tube, a gate voltage stabilizing circuit A, a gate voltage regulating circuit B, a voltage following circuit C, and a gate-drain power-on sequence protection circuit D, wherein the gate voltage stabilizing circuit comprises a voltage stabilizing chip U1; a +5V power supply is connected to the chip U1, and a REG pin end of the chip U1 is connected with an input end of the gate-drain power-on sequence protection circuit D; an output end of the gate-drain power-on sequence protection circuit D is connected with a drain of the GaN power amplifying tube; an OUT pin of the chip U1 is connected with an input end of the gate voltage regulating circuit B and an input end of the voltage following circuit C; an output end of the voltage following circuit C is connected with a gate of the GaN power amplifying tube; and the gate-drain power-on sequence protection circuit D is further connected with a system drain power supply Vd_IN. The GaN power amplifying tube bias protection circuit has the advantage that rapid switching between power amplifying bias power-on sequence protection and power amplification enabling and disabling, as well as controllable power amplification gains, can be effectively achieved.

Description

technical field [0001] The present invention relates to a circuit, in particular to a GaN power amplifier tube bias protection circuit. Background technique [0002] The RF power amplifier is to amplify the RF low-power signal in the transmitter, and output a large enough RF power to the antenna. [0003] The research progress of RF power amplifier is closely related to the development of electronic devices. The third-generation wide bandgap semiconductor power gallium nitride (GaN) power amplifier tube relies on the advantages of large bandgap width, high breakdown field strength, high saturation electron drift rate, small dielectric constant and strong radiation resistance, and is especially suitable for applications High-frequency, high-power and high-density integrated RF power amplifier, and can work in high temperature and harsh environment. However, the GaN power tube is a relatively expensive and fragile device, so how to protect the power amplifier must be conside...

AI Technical Summary

Problems solved by technology

When the power-on sequence of the gate voltage and the drain voltage is abnormal, it will cause the internal current of the GaN power amplifier tube to have an instantaneous large current, which exceeds the limit value of the tube itself, causing the over-current breakdown of the power amplifier tube to fail.

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