GaN field effect pipe component cell framework capable of reducing reverse leakage current

Abstract

The GaN field effect pipe component cell framework capable of reducing reverse leakage current comprises an N type substrate. An N type GaN layer is deposited on the N type substrate and P type implantation areas are arranged on two sides of the N type GaN layer. A P-type silicon layer is deposited on the N type GaN layer and an N type source electrode is deposited on the P type silicon layer. A gate trench is arranged on the N type GaN layer and the P type silicon layer and the gate trench is connected to the N type source electrode and the N type GaN layer. An N type polycrystalline siliconis deposited in the gate trench and an insulation layer wraps the outside of the gate trench. A dielectric layer is deposited on the P type silicon layer and a metal layer covers on the dielectric layer. A certain thickness is removed from the N type GaN substrate to form a heavily doped P type area. Because the P type concentration is greater than the N type GaN doped concentration, an exhaustionregion is extended to the N type GaN region. Furthermore, a shielding electric field area appears at an interface structure defective area and thus reverse leakage current caused by the interface defect can be reduced.

Description

technical field [0001] The invention belongs to the field of semiconductors, and in particular relates to a cell structure of N-GaN / P-Si heterogeneous interface field effect tube components. Background technique [0002] In the manufacturing process of GaN MOSFET power components, we deposit a P-type Silicon on an N-type GaN substrate; however, due to the mismatch of lattice and thermal expansion between GaN and Silicon; there are many junction interfaces. Structural and electrical defects. In the case of reverse bias (reverse bias), due to the high electric field of the depletion region (depletion region) occurs in this region, the minority carrier current generated by the bandgap trap formed by the interface defect due to the high electric field will be much larger than that of the traditional silicon wafer reverse leakage current. [0003] Such as figure 1 As shown, when depositing a P-type silicon 2 on an N-type GaN substrate 1 , due to the difference in lattice struc...

AI Technical Summary

Problems solved by technology

In the case of reverse bias; due to the characteristics of the PN junction, the depletion region will extend from the interface to both ends; and the high electric field is mainly across the defect area of ​​the interface structure, thus increasing the reverse leakage current and affecting the characteristics of the component

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