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Conductive textile product based on layer-by-layer self-assembled silver nanowire/graphene

A layer-by-layer self-assembly, silver nanowire technology, used in textiles and papermaking, fiber processing, plant fibers, etc., can solve the problem of bond fastness to be improved, and achieve the effect of excellent washing fastness and excellent electrical conductivity.

Inactive Publication Date: 2018-01-09
赵兵
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, similar to the principle of interaction between AgNWs and textile fibers, the physical adsorption between the outermost layer of graphene material and the inner layer of AgNWs is still dominated by physical adsorption, and the bonding fastness between the two needs to be improved.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] (1) Prepare silver nanowires into 1g / L aqueous solution, then add 1g / L PAMAM aqueous solution, the volume ratio of PAMAM to silver nanowire aqueous solution is 1:1, stir and react at a constant speed at room temperature for 24h, then use PAMAM-modified silver nanowires were obtained after repeated washing with ionized water and ethanol and drying. (2) Soak the cotton cloth in 1g / LPAMAM modified silver nanowire aqueous solution for 10min, the bath ratio is 1:10, take it out, rinse it repeatedly with deionized water, and dry it; then soak the above cotton cloth in 1g / L graphene oxide aqueous solution 10min, bath ratio 1:10, after taking it out, rinse it repeatedly with deionized water, dry it, place it in a hydrazine hydrate solution at 90°C for 2h, wash, filter it with suction, and dry it in vacuum to obtain a layer-by-layer self-assembled silver nanowire / graphite vinyl conductive textiles.

Embodiment 2

[0016] (1) Prepare silver nanowires into a 5g / L aqueous solution, then add 5g / L PAMAM aqueous solution, the volume ratio of PAMAM to silver nanowire aqueous solution is 1:5, stir and react at a constant speed at room temperature for 24h, then use PAMAM-modified silver nanowires were obtained after repeated washing with ionized water and ethanol and drying. (2) Soak the polyester cloth in 5g / LPAMAM modified silver nanowire aqueous solution for 30min, the bath ratio is 1:10, take it out, rinse it repeatedly with deionized water, and dry it; then soak the above polyester cloth in 5g / L graphene oxide In the aqueous solution for 30 minutes, the bath ratio is 1:10, after taking it out, rinse it repeatedly with deionized water, and dry it. So far, a layer of silver nanowires / graphene oxide has been assembled on the surface of the textile, and then the silver nanowires are modified in PAMAM and oxidized Repeat the above operation twice in the graphene finishing solution, then place it...

Embodiment 3

[0018] (1) Prepare the silver nanowires into a 10g / L aqueous solution, then add 10g / L PAMAM aqueous solution, the volume ratio of the PAMAM to the silver nanowire aqueous solution is 1:10, stir and react at a constant speed at room temperature for 24 hours, then use PAMAM-modified silver nanowires were obtained after repeated washing with ionized water and ethanol and drying. (2) Immerse the silk fabric in 10g / LPAMAM modified silver nanowire aqueous solution for 60min, the bath ratio is 1:10, take it out, rinse it repeatedly with deionized water, and dry it; then soak the above silk fabric in 10g / L graphene oxide In the aqueous solution for 60 minutes, the bath ratio is 1:10, after taking it out, rinse it repeatedly with deionized water, and dry it. So far, a layer of silver nanowires / graphene oxide has been assembled on the surface of the textile, and then the silver nanowires are modified in PAMAM and oxidized The above operation was repeated five times in the graphene finis...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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PUM

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Abstract

The invention discloses a conductive textile product based on layer-by-layer self-assembled silver nanowire / graphene. Electrostatic attraction is utilized to self-assemble silver nanowires and graphene oxide layer by layer to modify a textile product, finally, graphene oxide is reduced, and ultimately, the conductive textile product with excellent conductive, antibacterial and anti-ultraviolet properties and fastness to washing is obtained. The conductive textile product has the advantages of simple preparation steps, easiness in integration, almost no influence on wearing comfort of fabrics,good durability, low cost, antibacterial and anti-ultraviolet function obtainment and the like, and has important application value in the fields such as wearable devices, thermal textile products, electrothermal textile products, flexible electronic sensors, hyperelastic conductive composite fibers and self-energized textile products.

Description

technical field [0001] The invention relates to a conductive textile based on layer-by-layer self-assembled silver nanowires / graphene, which belongs to the field of textiles. Background technique [0002] With the gradual miniaturization, integration and flexibility of modern electronic products and the improvement of people's demand for wearable textiles, textiles are gradually developing in the direction of functionalization, intelligence and electronics, so the combination of electronic components and traditional textiles The new generation of flexible wearable textiles is a research hotspot, and has great application value in the fields of biology, medicine, sports, military, entertainment, aerospace and so on. [0003] Flexible wearable textiles include textiles, electronic components, conductive materials, and power supplies. Conductive materials play an extremely important role in flexible wearable textiles and are mainly used to transmit electrical energy and signals...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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Application Information

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IPC IPC(8): D06M11/74D06M11/83D06M15/61D06M101/06D06M101/32D06M101/10
Inventor 赵兵
Owner 赵兵
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