Phosphor material for near infrared LED and preparation method of phosphor material

A fluorescent powder and near-infrared technology, which is applied in the direction of luminescent materials, chemical instruments and methods, etc., to achieve the effects of wide excitation range, simple preparation method, and easy operation

Inactive Publication Date: 2018-01-12
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For a long time, people's research on solid luminescent materials has mainly focused on visible light and ultraviolet light-emitting fluorescent materials. There are relatively few studies on near-infrared emitting phosphors. There are no mature products of corresponding fluorescent materials on the market. Pathways to build high-performance and versatile infrared LED devices

Method used

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  • Phosphor material for near infrared LED and preparation method of phosphor material
  • Phosphor material for near infrared LED and preparation method of phosphor material
  • Phosphor material for near infrared LED and preparation method of phosphor material

Examples

Experimental program
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Effect test

Embodiment 1

[0028] Weigh raw material Sc 2 o 3 0.025 mol, H 3 BO 3 0.0625 mol, Cr 2 o 3 0.00025 moles. After the raw materials are fully mixed, they are sintered in air at 1300°C for 10h. The resulting product is fully ground, washed three times with deionized water, and dried at 80° C. to obtain the near-infrared fluorescent powder of the present invention. The excitation spectrum and emission spectrum of this embodiment are as attached figure 1 shown.

Embodiment 2

[0030] Weigh raw material Sc 2 o 3 0.025 mol, H 3 BO 3 0.1 mole, Cr 2 o 3 0.00025 mole, weigh 1% BaF of raw material weight 2 as a flux. After fully mixing the raw materials and flux, sinter in air at 1200°C for 5h. After the calcined product is fully ground, it is fired a second time at 1200°C for 10 hours in air. The resulting product is ground, washed three times with deionized water, and dried at 100° C. to obtain the near-infrared fluorescent powder of the present invention. The excitation spectrum and emission spectrum of this embodiment are as attached figure 2 , 3 shown.

Embodiment 3

[0032] Weigh raw material Sc 2 o 3 0.025 mol, H 3 BO 3 0.075 mol, Cr 2 o 3 0.0005 mol, weigh 5% of the raw material weight of BaF 2 as a flux. After fully mixing the raw materials and flux, sinter in air at 1200°C for 20h. After the calcined product is fully ground, it is washed three times with deionized water and dried at 120°C to obtain the near-infrared fluorescent powder of the present invention. The excitation spectrum and emission spectrum of this embodiment are as attached Figure 4 , 5 shown.

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Abstract

The invention discloses a phosphor material for a near infrared LED. The phosphor material is MBO3:xCr, wherein M is at least one of Sc, Al, Lu, Gd and Y, and x is not less than 0.005 and not more than 0.2. The phosphor material is prepared from the following raw materials: an oxygen-containing compound of Cr, an oxygen-containing compound of Sc, Al, Lu, Gd and Y, one of H3BO3 and B2O3; the raw materials are calcined after being mixed directly and uniformly, or a reaction fusing assistant is added into the raw materials, and after the raw materials and the reaction fusing assistant are fully mixed, the obtained mixture is calcined; post-processing treatment is conducted on the calcined product, the phosphor material is obtained. Compared with the prior art, the phosphor material provided by the invention is stable in chemical property and excellent in light emitting performance, can be efficiently excited by blue light of 420-520 nm and emit near infrared light in the range of 700-920nm; a preparation method of the phosphor material is simple, easy to operate, free of pollution and low in cost.

Description

technical field [0001] The invention relates to the technical field of solid luminescent materials, in particular to a phosphor material for near-infrared LEDs and a preparation method thereof. Background technique [0002] Semiconductor lighting sources have not only gradually replaced traditional incandescent and fluorescent lamps in the field of general lighting, but also continue to expand into new fields such as intelligent lighting, automotive lighting, plant lighting and infrared LEDs. Infrared LED is one of the important types of LEDs, and its wavelength falls around 700nm-1200nm. The application fields of infrared LEDs have expanded from security monitoring and sensor remote control to consumer electronics such as mobile phones and wearables, as well as food testing, somatosensory testing for VR applications, and healthcare. The infrared LEDs that are common in the current market mainly use semiconductor chips directly, which have disadvantages such as low single p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/80C09K11/78
Inventor 邵起越丁浩董岩蒋建清
Owner SOUTHEAST UNIV
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