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Analog switch circuit based on radio frequency switch chip

A technology of analog switch circuit and radio frequency switch, which is applied in the direction of electronic switch, electrical components, pulse technology, etc., can solve the problem that the radio frequency switch chip cannot carry DC level, etc., and achieve the effect of simple structure, improved processing capacity and small size

Pending Publication Date: 2018-01-12
GUANGDONG MECHANICAL & ELECTRICAL COLLEGE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] An analog switch circuit based on a radio frequency switch chip, the analog switch circuit is an application circuit of the radio frequency switch chip, which is mainly used to solve the problem that the radio frequency switch chip cannot carry DC level, and realize the switching frequency from DC (0 Hz) to 4G Hz control, the circuit structure mainly includes a radio frequency switch chip, a linear voltage regulator module that provides a stable voltage for the radio frequency switch chip, an operational amplifier module that extracts the DC component of the signal input terminal, and an optocoupler module that drives the radio frequency switch to work stably

Method used

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  • Analog switch circuit based on radio frequency switch chip

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Embodiment 1

[0032] This embodiment uses the radio frequency switch PE4245 chip as the core, cooperates with the corresponding driving circuit to realize the electronic switch of DC-4G Hz frequency.

[0033] PE4245 is a radio frequency switch produced by Peregrine Semiconductor. It adopts trap GaAs process, and its bandwidth can be as high as 4G. However, due to the limitations of its process and structure, its input port cannot have a DC level (it is clearly stated in the manual), and all radio frequency ports A DC blocking capacitor must be added or the DC level must be guaranteed to be zero. As a result, although the bandwidth can be from DC to 4G, it cannot have an excessive DC component. This is not just the PE4245 chip, all GaAs chips have this problem.

[0034] In order to solve this problem, this embodiment cleverly uses the bootstrap boost method to connect the GND of the PE4245 to the real GND (power ground), but to connect it to the common output terminal RF-COM of the radio fr...

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Abstract

The invention discloses an analog switch circuit based on a radio frequency switch chip. The circuit comprises a radio switch chip, a linear voltage stabilizing module, an operation amplification module and an optocoupling module, wherein the radio frequency switch chip is separately connected with the linear voltage stabilizing module, the operation amplification module and the optocoupling module. A public output terminal of the radio frequency switch chip is connected with a low pass filter, and a direct current component in a signal is directly fed back to the radio frequency switch chip and the linear voltage stabilizer under the effect of the operation amplifier, so that voltage of an earth terminal is changed along with the change of direct current voltage, a power output terminal of the linear voltage stabilizer is also changed along with the change of voltage, and thus the condition that a voltage difference between the power output terminal and a reference ground is a fixed value is ensured, no direct current voltage difference exists between the public output terminal and the earth terminal of the radio frequency switch chip, a condition that direct current biasing is zero is matched, stability and reliability of the radio frequency switch chip are significantly improved, and a better switch characteristic is acquired. The analog switch circuit provided by the invention also has the advantages of simple structure, low production cost and small size.

Description

technical field [0001] The invention relates to the field of analog switches, in particular to an analog switch circuit based on a radio frequency switch chip with a switching frequency from direct current (0 Hz) to 4G (4 gigahertz). Background technique [0002] Among the existing switches, there are reed relays, photoelectric relays, radio frequency switches, MEMS switches and the like. Among them, the photorelay can pass DC signals, but due to the influence of its mechanical structure, its high-frequency performance is not good. The general dry reed relay has better high frequency performance than the photorelay, but it is also within 1G. Some RF relays have higher high-frequency characteristics, but they are bulky and very expensive. MEMS switches are small, but also very expensive. The RF switch is cheap, small in size, and its frequency band can be infinitely close to DC. However, due to its internal structure limitations, the signal must pass through a DC blocking ...

Claims

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Application Information

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IPC IPC(8): H03K17/78H03K17/16
Inventor 辛苗刘建圻欧启标赵振廷程光
Owner GUANGDONG MECHANICAL & ELECTRICAL COLLEGE
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