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Power Amplifiers and Electronics

A power amplifier, amplifier technology, applied in power amplifiers, amplifiers, differential amplifiers, etc., can solve problems such as narrow design space and bandwidth limitations

Active Publication Date: 2018-09-07
RADIAWAVE TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] When the transformer resonates, such as figure 1 and figure 2 When the two-stage power amplifier, input matching, intermediate matching and output matching are all tuned at the same frequency point, the indicators of gain, frequency band selectivity, in-band group delay, gain flatness, and system efficiency are highly coupled. And bias conditions are different, the transition frequency is different, the design space will become narrow, and complex compromises are required. Often we optimize the gain distribution and bias conditions for efficiency, and the bandwidth will be severely limited.

Method used

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Embodiment Construction

[0040] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0041] It should be noted that if there is a directional indication (such as up, down, left, right, front, back...) in the embodiment of the present invention, the directional indication is only used to explain the position in a certain posture (as shown in the accompanying drawing). If the specific posture changes, the directional indication will also change accordingly.

[0042] In addition, if there are descriptions involving "first", "second" and ...

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Abstract

The invention discloses a power amplifier and electronic equipment. The technical solution of the invention adopts a two-stage power amplifier architecture of first stagger tuning and then power synthesis. In addition, the invention splits the front stage and its input matching driver into cascaded stagger tuning , so that the central frequency is at frequency point 1 which is less than the design channel and frequency point 2 is greater than the design frequency point, and then the final power combining stage is tuned to the design frequency point. In the advanced CMOS process node (for example: 65nm or below), the amplifier chip integrated with this architecture, compared with the known architecture, with the same number of transformers (same area), the in-band signal quality and out-of-band filtering effect will be better and more reliable. Higher performance; and because of its good in-band flatness, this architecture is especially suitable for carrier aggregation communication occasions.

Description

technical field [0001] The invention relates to the technical field of integrated circuits and electronic equipment, in particular to a power amplifier chip and electronic equipment. Background technique [0002] In the prior art, as the technology node of the RF chip integrated with the power amplifier shrinks, the design of the power amplifier will also become difficult; especially for the advanced technology node (such as: 65nm or below), because the tolerance voltage swing, current swing The ability is poor, and it will be challenging to design a high-power amplifier on it. [0003] refer to figure 1 (D. Chowdhury, C.D. Hull, O.B. Degani, Y. Wang, and A.M. Niknejad, "A fully integrated dual-mode highly linear 2.4Ghz CMOS power amplifier", IEEEJ.Solid-State Circuits, vol.43, no.3, pp .600-609, Mar.2009) and figure 2 (Y.Tan,H,Xu.(2016)CMOS power amplifier design for wireless connectivity applications:ahighly linear WLAN power amplifier in advanced SoC CMOS,In RF and mm...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03F1/56H03F1/48H03F3/21H03F3/45
CPCH03F1/42H03F1/565H03F3/193H03F3/195H03F3/211H03F3/245H03F3/45188H03F3/45475H03F2200/111H03F2200/222H03F2200/318H03F2200/451H03F2200/534H03F2200/537H03F2200/541H03F2203/21103H03F2203/21142H03F2203/45051H03F2203/45301H03F2203/45374H03F2203/45621H03F2203/45731H03F1/483H03F3/213H03F3/4521
Inventor 邵逸高檀聿麟戴思特冯海刚张宁
Owner RADIAWAVE TECH CO LTD
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