Excitation circuit with effects of increasing driving voltages of power field-effect transistor

A technology of power field effect tube and field effect tube, which is applied in the field of field effect tube, can solve the problems of increased design cost and unfavorable product sales, etc., and achieve the effects of increasing driving voltage, easy control, and simple use

Pending Publication Date: 2018-01-19
GUANG DONG GREENWAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Many motor drivers integrate charge pumps, but this will lead to increased design costs, which is not conducive to product sales

Method used

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  • Excitation circuit with effects of increasing driving voltages of power field-effect transistor

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Embodiment Construction

[0019] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is only some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0020] An excitation circuit for increasing the driving voltage of a power field effect transistor provided by the present invention will be described in more detail below in conjunction with the accompanying drawings and embodiments.

[0021] figure 1 It is a circuit diagram of an embodiment of an excitation circuit for improving power fiel...

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Abstract

The invention discloses an excitation circuit with effects of increasing driving voltages of a power field-effect transistor. The excitation circuit comprises a BMS (battery management system) voltageoutput end, a single chip microcomputer, an energy storage capacitor C1, a power input end, overvoltage protective resistors R1, R2, R3 and R4, a voltage stabilization chip U1 and the power field-effect transistor Q1. The BMS voltage output end is connected with a PWM (pulse width modulation) output end of the single chip microcomputer by the energy storage capacitor C1; the power field-effect transistor Q1 is connected with a voltage output end of the voltage stabilization chip U1 by the overvoltage protective resistor R4; the BMS voltage output end is connected with a power input end of thevoltage stabilization chip U1 by the overvoltage protective resistor R1; power can be supplied to the voltage stabilization chip U1 by the power input end VCC via the overvoltage protective resistorsR2 and R3. The excitation circuit has the advantages that the problem of incapability of driving existing power field-effect transistors due to conditions of stepping down of voltages can be solved by the aid of the excitation circuit; the excitation circuit is simple in structure, convenient to adjust, high in precision, little in ripple and easy to control, and stable voltages can be outputted.

Description

technical field [0001] The invention relates to the technical field of field effect tubes, in particular to an excitation circuit for increasing the driving voltage of a power field effect tube. Background technique [0002] The application fields of power FETs are becoming more and more extensive. The driving circuit composed of them is an important factor affecting the stability and reliability of the entire electronic circuit system. The G-pole driving requirements of different specifications of power FETs are also different. Among the G pole drive requirements of power FETs, there is a technical characteristic parameter V gs (th), usually the threshold voltage V of the low-voltage FET gs (th) within 4V, high voltage FET It is usually between 3-5V, and the driving circuit must meet Requirements, the circuit can work reliably and stably. [0003] However, in the existing use environment of field effect tubes, the VCC power supply voltage of MCU is usually within 5V, ...

Claims

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Application Information

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IPC IPC(8): H03K17/687
Inventor 吴伟吴齐秦友强李梓立
Owner GUANG DONG GREENWAY TECH CO LTD
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