Spin hall effect-based magnetic random access memory

A technology of magnetic random access memory and spin Hall effect, which is applied in the direction of Hall effect devices, magnetic field controlled resistors, electric solid state devices, etc., can solve the problems of complex steps, low read and write efficiency, etc., and improve space utilization Effect

Active Publication Date: 2018-02-02
XI AN JIAOTONG UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

This method is called "multi-step, self-referential reading rule". Its steps are complicated, and after the reading is completed, the original i

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  • Spin hall effect-based magnetic random access memory
  • Spin hall effect-based magnetic random access memory
  • Spin hall effect-based magnetic random access memory

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[0034] The present invention will be further described in detail below in conjunction with the drawings.

[0035] See figure 1 The SOT-MRAM memory cell 100 of the present invention includes a bottom electrode 101, a lower insulating layer 102, a non-magnetic heavy metal layer 103, an MTJ cell and a side electrode 107. The MTJ cell includes a ferromagnetic free layer 104 and a non-magnetic barrier layer 105 And the ferromagnetic pinning layer 106, the upper insulating layer 108 and the top electrode 109. The ferromagnetic free layer 104, the non-magnetic barrier layer 105, the ferromagnetic pinned layer 106, and the side electrode 107 are separated from the top electrode 109 and the bottom electrode 101 by the upper insulating layer 108 and the lower insulating layer 102. The non-magnetic heavy metal layer 103 directly contacts the top electrode 109 and the bottom electrode 101. In addition, the side electrode 107, the MTJ unit and the non-magnetic heavy metal layer 103 are all p...

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Abstract

Disclosed is a spin hall effect-based magnetic random access memory. The magnetic random access memory is characterized in that a non-magnetic heavy metal layer, an MTJ unit and a side electrode are all cuboid columnar and are perpendicular to a circular crystal substrate surface; an upper electrode, a bottom electrode and an insulation layer are parallel to the circular crystal substrate surface;meanwhile, the free layer of the MTJ unit is in direct contact with the non-magnetic heavy metal layer; the MTJ unit and the side electrode are isolated from the upper electrode and the bottom electrode through the insulation layer; and the non-magnetic heavy metal layer is in direct contact with the upper electrode and the bottom electrode. A spin hall effect-based SOT-MARM storage unit is characterized in that when a current flows through the non-magnetic heavy metal layer, a spin current is generated based on the spin hall effect; the spin current flows through the free layer to be acted on a free layer magnetic torque in a torque form to be subjected to turnover so as to complete information writing in; and in addition, when the current flows through the MTJ unit and flows to the sideelectrode through the bottom electrode, information reading in the storage unit is completed.

Description

technical field [0001] The present invention relates to the technical field of Magnetic Random Access Memory (MRAM), in particular to a Magnetic Random Access Memory (Spin OrbitTorque-Magnetic Random Access Memory, SOT-MRAM) based on Spin Hall Effect (Spin Hall Effect, SHE) ). Background technique [0002] Magnetic random access memory (MRAM) has good non-volatility, that is, data will not be lost after power failure; good thermal stability, stored information can be stored for more than ten years; and good read and write stability. It works by using Magnetic Tunneling Junction (MTJ) for data storage. Each MTJ unit includes a magnetic free layer (recording layer) and a pinned layer (pinned layer), and the free layer and the pinned layer are separated by a non-magnetic tunneling layer. When the MTJ works normally, the magnetization direction of the free layer can change, and the magnetization direction of the pinned layer remains unchanged. When the relative direction of t...

Claims

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Application Information

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IPC IPC(8): H01L43/04H01L43/06H01L43/08H01L27/22
CPCH10B61/10H10N52/80H10N52/00H10N50/10
Inventor 闵泰何岳巍
Owner XI AN JIAOTONG UNIV
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