A monolithic integrated chaotic laser chip based on random grating feedback

A chaotic laser and monolithic integration technology, applied in the direction of lasers, laser components, semiconductor lasers, etc., can solve the problems of poor integration, low coupling accuracy, and insufficient stability, and achieve strong integration, small size, and stable output Effect

Active Publication Date: 2019-11-08
TAIYUAN UNIV OF TECH
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  • Application Information

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Problems solved by technology

However, this chaotic laser uses flip-chip technology to couple devices such as distributed feedback semiconductor laser chips, semiconductor optical amplifier chips, etc. Low, not strong integration, not stable enough

Method used

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  • A monolithic integrated chaotic laser chip based on random grating feedback

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Embodiment Construction

[0033] see figure 1 As shown, the present invention provides a monolithic integrated chaotic laser chip structure based on random grating feedback, including:

[0034] a substrate 01;

[0035] Next limit layer 02,;

[0036] An active layer 03 fabricated on the lower confinement layer 02;

[0037] An upper confinement layer 04, which is fabricated on the active layer 03, works together with the lower confinement layer 02 to confine carriers and photons in the vertical direction;

[0038] A waveguide layer 05, which is strip-shaped, is longitudinally made in the middle of the upper confinement layer, and its function is mainly to limit the propagation of light laterally and guide the light;

[0039] a P + electrode layer 06, which is fabricated on the waveguide layer 05, the P + The electrode layer 06 is divided into two sections by an isolation trench 08, and the isolation trench 08 is formed by implanting He + The way of ions makes it a high resistance area, so as to re...

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Abstract

The invention provides a monolithic integration chaos laser chip based on random optical grating feedback. The monolithic integration chaos laser chip based on random optical grating feedback comprises a substrate; a lower limiting layer made on the substrate; an active layer made on the lower limiting layer; an upper limiting layer made on the active layer; a wave guide layer longitudinally madein the middle of the top of the upper limiting layer; a P+ electrode layer which is divided into two segments by an isolation trench and made on the wave guide layer; and N+ electrode layer which is made on the back surface of the lower limiting layer. The P+ electrode layer which is divided into two segments is corresponding to a DFB laser area and a random feedback area; the DFB laser area provides output light and feedback light for the whole chip and an upper limiting layer portion corresponding thereto is provided with a distributed feedback Bragg optical grating layer; the random feedback area performs random multi-feedback for light emitted by the DFB laser area; an active layer portion corresponding to the random feedback area is provided with a random feedback optical grating. Themonolithic integration chaos laser chip based on random optical grating feedback employs the random optical grating feedback structure to generate chaos laser, thereby thoroughly eliminating the timedelay characteristic of a single cavity light feedback chaos laser.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronics, in particular to a monolithic integrated chaotic laser chip based on random grating feedback. Background technique [0002] As a special output form of lasers, chaotic laser has the characteristics of randomness and wide frequency spectrum. Research shows that chaotic laser has shown its important application value in the fields of chaotic secure optical communication, high-speed random number key generation, anti-jamming laser radar, optical fiber network fault detection, distributed optical fiber sensing and so on. [0003] At present, most of the chaotic laser generation methods are built in the laboratory using semiconductor lasers and various external discrete optical components, which are large in size, high in cost, complex in layout, susceptible to environmental influences, and unstable in output. With the progress of new micro-nano photonic device research and the continuous...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/12H01S5/125H01S5/068
CPCH01S5/068H01S5/12H01S5/125
Inventor 赵彤张明江徐雨航张建忠刘毅乔丽君王安帮王云才
Owner TAIYUAN UNIV OF TECH
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