Manufacturing method of grid insulation layer

Abstract

The invention relates to the technical field of a semiconductor and particularly relates to a manufacturing method of a grid insulation layer. The method comprises steps that step S1, a substrate is provided; and step S2, chemical vapor deposition equipment is employed to deposit a grid insulation layer on an upper surface of the substrate, a radio frequency power reducing from a first radio frequency power to a second radio frequency power is employed to dissociate a reactant gas to form the grid insulation layer for deposition, and the second radio frequency power is in a range of 0-50W. Themethod is advantaged in that a problem of charge capture generated on the grid insulation layer can be avoided, and products are facilitated to have the high yield and high reliability.

Description

technical field [0001] The invention relates to the technical field of semiconductors, and in particular, to a method for preparing a gate insulating layer. Background technique [0002] MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor Metal-Oxide Semiconductor Field Effect Transistor, MOSFET for short) is a field effect transistor that can be widely used in analog circuits and digital circuits. The preparation of MOSFET generally requires preparation of its gate structure, and the performance of the gate structure also directly affects the performance of the MOSFET device. [0003] GOI (Gate Oxide Integrity, GOI for short) is an important criterion for measuring the failure of MOS devices. One of the reasons for the GOI problem in the prior art is the appearance of the surface of the gate insulating layer caused by the process of the gate insulating layer. In the case of charge trapping, and it is difficult to remove the trapped charge through subsequent processes...

AI Technical Summary

Problems solved by technology

[0003] GOI (Gate Oxide Integrity, referred to as GOI) is an important criterion for measuring the failure of MOS devices. One of the reasons for the GOI problem in the prior art is the appearance of the surface of the gate insulating layer caused by the process of the gate insulating layer. In the case of charge trapping, it is difficult to remove the trapped charge through subsequent processes, and the GOI problem cannot be avoided

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