Crystal grain size measuring method and device, and polycrystalline silicon thin film production method

Abstract

The invention provides a crystal grain size measuring method and device, and a polycrystalline silicon thin film production method, aiming to realize that the measured crystal grain size well reflectsthe crystal grain shape characteristics to effectively guide the process production. The invention provides a crystal grain size measuring method comprising the following steps of acquiring a crystalgrain morphology graph of a crystal region of a crystal, and drawing a crystal grain boundary graph according to the crystal grain morphology graph; measuring at least one crystal grain in the crystal grain boundary graph, and respectively determining the transverse size and the longitudinal size of each measured crystal grain; and according to the measured transverse size and longitudinal size of the crystal grain, determining the transverse size and the longitudinal size of the crystal grain.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a crystal grain size measurement method and device, and a polysilicon film production method. Background technique [0002] Polycrystalline silicon (p-Si) thin film transistors have higher electron mobility than amorphous silicon (a-Si) thin film transistors, and are widely used in array substrates of display panels. At present, the active layer in a polysilicon thin film transistor is generally a polysilicon film formed by an excimer laser annealing process on an amorphous silicon film. The quality of the prepared polysilicon film will have an important impact on the electrical properties of a polysilicon thin film transistor. The pros and cons of the polysilicon film are evaluated by measuring the grain size of the polysilicon film. The more the measured grain size can reflect the grain shape characteristics, the better the evaluation of the pros and cons of the polysilicon fi...

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Problems solved by technology

[0003] However, the current method for measuring the grain size of polysilicon thin films is generally realized by counting the average area of ​​the grains in the grain interface diagram, but the average area of ​​the grains cannot reflect the shape characteristics of the grains well. Measuring the grain size of irregularly shaped polysilicon films (e.g. figure 1 shown) and the grain size of polysilicon film with tetragonal crystal structure (such as figure 2 shown), the statistical average grain area is 0.106μm 2 and 0.102μm 2 , although the average grain area of ​​the statistics of the two is similar, it actually represents two different types of polysilicon grains, so this method cannot effectively guide the process production, so that polysilicon thin film transistors with excellent electrical properties cannot be prepared

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