Voltage-controlled thin film device with positive and negative reversibly changeable photoconduction and control method
A technology of thin-film devices and voltage control, which is applied in the field of microelectronics and can solve problems such as increased application complexity
Pending Publication Date: 2018-02-09
BEIJING NORMAL UNIVERSITY +1
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Problems solved by technology
[0005] In order to solve the problem that the complexity of its application will increase when the existing technology needs to meet the detection requirements of positive and negative polarities of photoconductivity at the same time, the present invention provides a voltage-controlled photoconductive sensor with positive and negative reversible changes. Thin film device and control method
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[0041] The following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0042] The terms involved in this article are explained in detail below:
[0043] Ferroelectrics: some crystals have spontaneous electric polarization within a certain temperature range, and the direction of their spontaneous polarization can be reversed due to the reversal of the direction of the external electric field. This property of crystals is called ferroelectricity, which has iron Electric crystals are called ferroelectrics.
[0044...
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Abstract
The present invention provides a voltage-controlled thin film device with positive and negative reversibly changeable photoconduction and a control method. The thin film device includes a first electrode, a thin film, a substrate and a second electrode which are distributed sequentially from top to bottom, wherein the thin film is made of a semiconductor material and is formed at one side of the substrate through epitaxial growth, the substrate is made of a ferroelectric oxide insulator or an incipient ferroelectric oxide insulator, the first electrode is located on the thin film, and the second electrode is located on the other side of the substrate; the thin film is preferably made of a manganese oxide having a carrier concentration lower than 1*10<20> / cm<3>, wherein the manganese oxidecan be optionally lanthanum manganate, neodymium manganate or praseodymium manganate; the substrate is preferably made of a strontium titanate monocrystal which is of a perovskite structure and has the properties of the incipient ferroelectric oxide insulator; and the first electrode and the second electrode are preferably gold electrodes or aluminum electrodes. The photoconduction of the thin film device provided by the invention is positive and negative reversibly changeable, so that the complexity of the application of a photoresistor device can be decreased.
Description
technical field [0001] The invention relates to the technical field of microelectronics, in particular to a voltage-controlled thin-film device with positive and negative photoconductivity reversible changes and a control method. Background technique [0002] Human beings have entered the information age, and microelectronics technology is undoubtedly one of the core technologies of the information society. In microelectronics technology, the detection and processing of photoelectric signals play an important role in the development of information technology. Taking photoresistive devices as an example, photoresistive devices, as one of the basic components used for photoelectric signal detection, have been widely used in photoelectric detection, photoelectric tracking, missile guidance and other fields. [0003] In the application of photoelectric signal detection and processing, the photoconductive effect will be applied. The photoconductive effect includes positive phot...
Claims
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Login to View More IPC IPC(8): H01L31/102H01L31/18
CPCH01L31/102H01L31/18Y02P70/50
Inventor 熊昌民王帅贾金山熊娇娇杜海伦聂家财马天星
Owner BEIJING NORMAL UNIVERSITY