Manufacturing method of aluminum gasket

Abstract

The invention discloses a manufacturing method of an aluminum gasket, applied to the manufacturing field of a semiconductor. The manufacturing method comprises the following steps of obtaining the aluminum gasket which is formed by an aluminum thin film by adopting a physical vapor deposition method; after performing etching and cleaning, carrying out sputtering on the aluminum gasket by plasma inan inert gas; and adopting oxygen as the gas source, performing annealing treatment for the second time. By adoption of the technical scheme provided by the invention, the residual fluorine concentration on the surface of the aluminum gasket in the etching process of the aluminum gasket can be greatly lowered, and generation of crystal defects on the surface of the aluminum gasket can be suppressed effectively.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing an aluminum pad Background technique [0002] The aluminum pad is the connection interface between the semiconductor wafer and the outside world, and the semiconductor wafer can form a metal connection with the outside world through the aluminum pad. In the manufacturing process of the aluminum liner, it is usually necessary to perform dry etching on the covering layer on the surface of the aluminum liner. In this dry etching process, since fluorine-containing polymers are used, fluorine-containing residues will be generated. [0003] In the subsequent process, the semiconductor wafer needs to be placed on the plastic material. With natural degradation, the residual fluorine ions on the surface of the wafer will be gradually released. As the use time increases, more and more negative ions will be released. The environment of the foundry or te...

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Problems solved by technology

[0005] Under the condition that the plastic placement environment and the water vapor environment of the foundry or test factory cannot be changed or improved, in the existing technology, a large amount of deionized water is used to clean the wafer, but this method can only reduce the surface fluoride ion concentration, it is difficult to completely remove fluoride ions, and repeated washing also consumes a lot of water resources

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