SiC power device-based full bridge LLC resonance type plasma power supply

A technology of plasma and power devices, which is applied in the direction of output power conversion device, conversion of AC power input to DC power output, conversion of DC power input to DC power output, etc., to achieve low dynamic loss, high reliability, and improved efficiency Effect

Active Publication Date: 2018-02-16
SOUTH CHINA UNIV OF TECH
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, the application of SiC power devices in plasma power supplies is still blank; therefore, it is necessar

Method used

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  • SiC power device-based full bridge LLC resonance type plasma power supply
  • SiC power device-based full bridge LLC resonance type plasma power supply
  • SiC power device-based full bridge LLC resonance type plasma power supply

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Example Embodiment

[0027] Example

[0028] Such as Figure 1 to Figure 4 As shown, the full-bridge LLC resonant plasma power supply based on SiC power devices in this embodiment includes a main circuit and a control circuit; the main circuit includes a rectifier filter module, a high-frequency full-bridge inverter module, a high-frequency transformer module, and a fast rectifier connected in sequence. Filter module: The rectifier filter module is connected to the three-phase AC input power supply, and the fast rectifier filter module is connected to the load.

[0029] The high-frequency full-bridge inverter module includes SiC power switch Q101, SiC power switch Q102, SiC power switch Q103, SiC power switch Q104, inductor L102, inductor L103 and capacitor C107; SiC power switch Q101 and SiC power switch Q103 Connected in series and connected in parallel to the rectifier and filter module; SiC power switch tube Q102 and SiC power switch tube Q104 are connected in series and then connected in parallel ...

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Abstract

The invention provides a SiC power device-based full bridge LLC resonance type plasma power supply. The plasma power supply is characterized by comprising a main circuit and a control circuit; the main circuit comprises a rectifying and filtering module, a high-frequency full-bridge inversion module, a high-frequency voltage transformation module and a quick rectifying and filtering module connected in sequence; the rectifying and filtering module is connected with a three-phase alternating current input power supply; the quick rectifying and filtering module is connected with a load, whereinthe high-frequency full-bridge inversion module adopts a full-bridge inversion LLC type zero-voltage soft switch topological structure; and the high-frequency full-bridge inversion module, the high-frequency voltage transformation module and the quick rectifying and filtering module are electrically connected with the control circuit separately so as to realize that the control circuit controls the power supply to output. The plasma power supply is high in efficiency, high in power density and reliability, capable of lowering electromagnetic interference strength and realizing output at relatively high power, has high dynamic response performance and can promote high-speed accurate regulation and control on the plasma load.

Description

technical field [0001] The patent of the present invention relates to the technical field of special power supplies, and specifically refers to a full-bridge LLC resonant plasma power supply based on SiC power devices. Background technique [0002] Plasma power supplies are developing towards higher requirements such as high efficiency, high power density (miniaturization), high frequency and high voltage, etc., which are mainly achieved through high frequency of power devices and reduction of power consumption. At present, Si-based power devices are generally used in high-power plasma power supplies at home and abroad because of their high-voltage, high-current, and high-power characteristics; however, the performance of Si-based power devices is close to the theoretical limit determined by their material properties. The potential to increase frequency and reduce power consumption has been extremely limited. [0003] Compared with Si power devices, the new generation of Si...

Claims

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Application Information

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IPC IPC(8): H02M7/217H02M7/5387H02M3/335
CPCH02M7/217H02M7/5387H02M7/4815H02M3/01H02M3/33573Y02B70/10
Inventor 王振民范文艳谢芳祥
Owner SOUTH CHINA UNIV OF TECH
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